Themed collection Transport in Organic and Hybrid Semiconductors

For DRAM node downscaling, planar oxide-channel transistors must transition to VCT. This review explores strategies to reduce contact resistance, including conductive region formation, n⁺ layer insertion, metal selection, and surface engineering.

Localized electron transport channel is developed in inverted PSCs with nanoscale phase-separated PM6:PCBM to inhibit interfacial recombination. Resulting PSCs exhibit high efficiency of 25.60% with good stability.

Commercially available transparent conducting materials (TCMs) are typically n-type, and high-performance p-type TCMs are rare, which would impede the development of optoelectronics.

The electro-crosslinked polymer formed from the “star-shaped” precursor TCTA exhibits inherent twisted conformations. While electropolymerization results in highly planar, doping-controlled films, it also limits their electrical performance.

In this work, we present a series of N-heterotriangulenes featuring electron-rich, electronically discrete bridging moieties forming distinct 3D structures. We investigate their physical properties and performance in OLED devices.

Carbon nanotube decorated thienothiophene based supercapacitors are highly promising materials for energy storage due to their high capacitance and power density with super-long cycling stability.

This study examines, through the combined application of atomic force microscopy (AFM) and molecular dynamics (MD) simulations, the influence of microstructural organization on the mechanical properties of IDTBT and PBTTT semiconducting polymers.

Kinetic Monte-Carlo simulations using the Miller–Abrahams rate seem to fail for systems with low disorder or at high electric fields. This can be overcome by using the original, full expression instead of the commonly used approximation.

Six naturally occurring waxes of plant and animal origin are demonstrated to be excellent dielectric materials for organic field effect transistors operating at low voltage in the frame of sustainable electronics development.

A two-dimensional plot of in-plane quadrupole moments in organic semiconductors provides a phase diagram of their crystal structures.

IRRAS with multivariate analysis allows identification of extended oxidative degradation with interchain coupling for fluorene-containing OSCs and distinguishing differences in chemistry at ITO and Ag contacts.

Hygroscopic insulator field effect transistors require moisture for low voltage operation. However, long term exposure to moisture degrades transistor performance.

We demonstrated reconfigurable artificial synapses using a floating-gate-type organic antiambipolar transistor. This feature highlights the potential for a brain-like computing architecture that surpasses current von Neumann systems.

Transparent conducting oxides play a key role in optoelectronics, but high-mobility p-type materials remain rare. This work highlights Sn(II) oxides as promising candidates based on first-principles calculations.

Three n-type stretchable polymers (P1–P3) based on azo-BDOPV balanced flexibility and charge transport. Stretchable OFETs retained high performance under 15–50% strain. P3 showed the highest initial mobility (0.52 cm² V⁻¹ s⁻¹) and strain retention.

Inverted p–i–n PSCs based on highly continuous and compact CuBO₂ HTLs exhibit a remarkable PCE of 18.26% and demonstrate superior open-circuit voltage and environmental stability compared with PEDOT:PSS-based devices.

A quinoidal propylenedioxythiophene dimer exhibited good crystallinity, solution processability, and air-stable n-type organic field-effect transistor properties. The electron mobility was maintained for more than 30 days in air storage.

Stabilization of n-type carbon nanotubes is achieved by separate n-doping and cation replacement processes utilizing bicyclic guanidinium cation as stabilizer.

We present a novel approach to detect traps in thin-film transistors (TFTs) by analyzing their current-related characteristics.

The cationic CPE-Br outperforms the anionic CPE-K in pseudocapacitor applications, delivering higher capacitance, improved rate performance, and faster ion diffusion, attributed to suppressed self-doping and enhanced anion accessibility.

Processing control allows delineating the individual effect of the donor and acceptor ordering in the performance of organic solar cells.

Enhanced SWIR phototransistor performance is achieved through a dual strategy combining polymer blends of two D–A type low-bandgap conjugated polymers with type I band alignment and a metal reflector design.

A comparison of atomic layer deposited Al₂O₃ on PVDF-based copolymers in polymer transistors shows a significant improvement in the subthreshold swing for PVDF-HFP devices compared with PVDF-TrFE. Al₂O₃ passivates the interfacial traps.

α-CN ligand enables stereo-directional perovskite crystallization, enhancing performance for superior indoor photodetectors and energy harvesting applications.

Organic field-effect transistors were fabricated using thieno[2,3-b]thiophene derivatives with alkyl side chains. The resulting devices exhibited well-defined surface morphology, superior air stability, and a notable hole mobility of 0.42 cm²/V s.

This study presents a simple yet effective “strong electron-withdrawing group end-capping” strategy for designing high-mobility polymer semiconductors by reducing energy levels and optimizing molecular packing.

Hysteresis-free and stable operation achieved in top-gate SnO TFTs by inserting an Al₂O₃ interlayer that protects the surface of the metastable SnO channel.

Two indandione-terminated quinoidal compounds with fused hexacyclic thiophene-thieno[3,2-b]thiophene-thiophene as the core have been synthesized. The two compounds showed low bandgap and electron transport behaviour.

TDPPQ-B exhibits an exciting electron mobility of up to 2.17 cm² V⁻¹ s⁻¹ in OFETs processed from 2-MTHF solution by edge-casting, which is the first report on nonhalogenated-solvent-processed OFETs with electron mobility above 1 cm² V⁻¹ s⁻¹.

Electrofluorochromism of C12-BTBT OFETs is realized and modulated by space charge regulation in dielectrics, enabling optical-electrical dual output characteristics.

Three IDT units employed as central core and functionalized with PDI moieties were purposely designed. The A–D–A structures were built and constructed the channels for efficient electron transport and allow electrons to be more delocalized.

A two-step process was developed to spin-coat thin films of the vacancy-ordered double perovskite, Cs₂TeX₆. These films enabled characterization of the electronic transport properties of Cs₂TeBr₆.

An electrically erasable multi-level charge trapping memory is proposed for organic synaptic transistors, employing metal nanoparticle engineering.

A Li-TFSI/12-crown-4 chelate not only enhances the Li-TFSI solubility, increasing doping concentration from 50 to 80 mol%, but also inhibits Li⁺ migration, hygroscopicity and pinholes. Ultimately, PSCs achieved a PCE of 23.99% and improved stability.

A WSe₂-based lateral homojunction PN diode with IGZO-induced polarity modulation exhibits high rectification, photoresponsivity (40.1 A W⁻¹), and quantum efficiency (13634%), showcasing potential for next-generation optoelectronic devices.

Solution-processable copper halides heal structural defects associated with SCN⁻ vacancies in CuSCN, restoring the coordination environment around Cu(I) and enhancing hole transport properties.

Large-diameter cyclo[n]carbon-based devices exhibit the negative differential resistance (NDR) effect. The magnitude, position, and number of NDR peaks are remarkably affected by the number of carbon atoms and the type of electrode.

Chalcogenide perovskites are emerging as game-changers in optoelectronics, thanks to their exceptional stability, eco-friendly nature, optimal bandgaps, strong light absorption, and remarkable defect tolerance.

Low-voltage-enabled modulation of the optical response at room temperature in the IR spectral range has been detected by means of in operando spectroscopic ellipsometry in a Al-doped ZnO/BaTiO₃ bilayer deposited on Nb-doped SrTiO₃ substrate.

Artificial synapses capable of neuromorphic computation are crucial for improving the processing efficiency of existing information technologies.

We predicted the high thermoelectric properties of As₂Ge monolayers, and the maximum ZT of n-type doping is 4.36.

The impact of mechanical deformation on the electrical properties of flexible electrolyte-gated organic field-effect transistors is explored. Large gauge factors are observed, likely due to changes at the electrical double layers.

This work focus on the direct observation of intrinsic minority charge carrier diffusion length of organic semiconductors, which is experimentally on the order of micrometers and corresponds to their good performance in thick films.

We show that IDT-BT EGOFETs are susceptible to bias induced doping and charge trap generation, but that they nonetheless can achieve a high degree of stability and lifetimes in excess of 100 hours under bias.

Characterizing polymerized ionic liquids as the dielectric material in OTFTs to achieve low power consumption devices.