Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

Haichao Chen; Jianjun Jiang; Li Zhang; Houzhao Wan; Tong Qi; Dandan Xia

doi:10.1039/C3NR02958A

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Highly conductive NiCo₂S₄ urchin-like nanostructures for high-rate pseudocapacitors†

Haichao Chen,^a Jianjun Jiang,*^a Li Zhang,^a Houzhao Wan,^a Tong Qi^a and Dandan Xia^a

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* Corresponding authors

^a School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
E-mail: jiangjj@mail.hust.edu.cn

Abstract

A 3D highly conductive urchin-like NiCo₂S₄ nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo₂S₄ electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

This article is part of the themed collection: Nanoscale 10th Anniversary: Top Cited Articles

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Article information

DOI: https://doi.org/10.1039/C3NR02958A
Article type: Communication
Submitted: 07 juin 2013
Accepted: 14 juil. 2013
First published: 16 juil. 2013

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Nanoscale, 2013,5, 8879-8883

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Highly conductive NiCo₂S₄ urchin-like nanostructures for high-rate pseudocapacitors

H. Chen, J. Jiang, L. Zhang, H. Wan, T. Qi and D. Xia, Nanoscale, 2013, 5, 8879 DOI: 10.1039/C3NR02958A

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