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Narrow band gap and high mobility of lead-free perovskite single crystal Sn-doped MA3Sb2I9

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Abstract

Sb-based perovskite structures have been studied as the potential materials to replace lead hybrid perovskite. However, their broad band gap makes them unsuitable for single-junction solar cells, which spurred researchers to design new strategies to narrow the band gap and broaden their photovoltaic application. Herein, a general doping strategy was designed to obtain lead-free and large size Sn-doped MA3Sb2I9 single crystals. Their crystal structures and valence states were investigated in detail by X-ray diffraction and the X-ray photoelectron spectroscopy, revealing distinct lattice expansion, thus demonstrating the successful doping of Sn2+. After the doping of Sn2+, a significant 296 nm red-shifted light absorption peak was clearly observed, and the carrier mobility enhanced by about two-fold, as investigated by space charge-limited current (SCLC) and Hall effect measurements. The trend of the band gap determined by the first-principles calculations matches well with that of experiments. The corresponding narrowing mechanism of band gap after the doping is also revealed in detail. These extremely promising photoelectric properties of Sn-doped MA3Sb2I9 shown herein motivate further exploration of their photovoltaic application.

Graphical abstract: Narrow band gap and high mobility of lead-free perovskite single crystal Sn-doped MA3Sb2I9

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Publication details

The article was received on 27 Aug 2018, accepted on 01 Oct 2018 and first published on 02 Oct 2018


Article type: Paper
DOI: 10.1039/C8TA08315K
Citation: J. Mater. Chem. A, 2018, Advance Article
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    Narrow band gap and high mobility of lead-free perovskite single crystal Sn-doped MA3Sb2I9

    D. Ju, X. Jiang, H. Xiao, X. Chen, X. Hu and X. Tao, J. Mater. Chem. A, 2018, Advance Article , DOI: 10.1039/C8TA08315K

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