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Issue 41, 2015
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Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

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Abstract

We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by β-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600–1000 °C for the deposition of X-ray amorphous BxC films with 2.5 ≤ x ≤ 4.5 from TEB. Films grown at temperatures below 600 °C contain high amounts of H, while temperatures above 1000 °C result in C-rich films. The film density and hardness are determined to be in the range of 2.40–2.65 g cm−3 and 29–39 GPa, respectively, within the determined temperature window.

Graphical abstract: Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

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Supplementary files

Article information


Submitted
27 Jul 2015
Accepted
16 Sep 2015
First published
17 Sep 2015

This article is Open Access

J. Mater. Chem. C, 2015,3, 10898-10906
Article type
Paper
Author version available

Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

M. Imam, K. Gaul, A. Stegmüller, C. Höglund, J. Jensen, L. Hultman, J. Birch, R. Tonner and H. Pedersen, J. Mater. Chem. C, 2015, 3, 10898
DOI: 10.1039/C5TC02293B

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