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Issue 41, 2015
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Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

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Abstract

We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by β-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600–1000 °C for the deposition of X-ray amorphous BxC films with 2.5 ≤ x ≤ 4.5 from TEB. Films grown at temperatures below 600 °C contain high amounts of H, while temperatures above 1000 °C result in C-rich films. The film density and hardness are determined to be in the range of 2.40–2.65 g cm−3 and 29–39 GPa, respectively, within the determined temperature window.

Graphical abstract: Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

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Publication details

The article was received on 27 Jul 2015, accepted on 16 Sep 2015 and first published on 17 Sep 2015


Article type: Paper
DOI: 10.1039/C5TC02293B
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J. Mater. Chem. C, 2015,3, 10898-10906
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    Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

    M. Imam, K. Gaul, A. Stegmüller, C. Höglund, J. Jensen, L. Hultman, J. Birch, R. Tonner and H. Pedersen, J. Mater. Chem. C, 2015, 3, 10898
    DOI: 10.1039/C5TC02293B

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