Issue 41, 2015
From the journal:

Journal of Materials Chemistry C

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Ji Zhang,†ab   Kai Zhang,†c   Weifeng Zhang,a   Zupan Mao,ab   Man Shing Wong*c  and  Gui Yu*a  

* Corresponding authors

a Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
E-mail: yugui@iccas.ac.cn

b University of Chinese Academy of Sciences, Beijing 100049, P. R. China

c Institute of Molecular Functional Materials, Department of Chemistry, and Institute of Advanced Materials, Hong Kong Baptist University, Kowloon Tong, Hong Kong SAR, P. R. China
E-mail: mswong@hkbu.edu.hk

Abstract

Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V−1 s−1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

Graphical abstract: Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C5TC01907A
Article type
Paper
Submitted
27 Jun 2015
Accepted
20 Sep 2015
First published
30 Sep 2015

J. Mater. Chem. C, 2015,3, 10892-10897

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Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

J. Zhang, K. Zhang, W. Zhang, Z. Mao, M. S. Wong and G. Yu, J. Mater. Chem. C, 2015, 3, 10892 DOI: 10.1039/C5TC01907A

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