Mengke Cai†
*ab,
Shuai Huang†a,
Yimin Youa,
Haotian Jianga,
Jing Qiua,
Wei Zhanga,
Qiang Xua,
Si Shena,
Weiying Hua,
Shijie Denga,
Zhuojian Lib,
Xin Tong*bc and
Hai-Zhi Song*abcd
aQuantum Research Center, Southwest Institute of Technical Physics, Chengdu 610041, China
bInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China. E-mail: tong@uestc.edu.cn; 202011210301@std.uestc.edu.cn; hzsong@uestc.edu.cn
cShimmer Center, Tianfu Jiangxi Laboratory, Chengdu 641419, China
dState Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130013, China
First published on 29th April 2025
Solar energy is the most abundant and clean energy resource for the production of hydrogen, which is inexpensive but requires robust semiconductors. Colloidal quantum dots (CQDs) are considered an ideal semiconductor for hydrogen production. Although light-driven hydrogen production systems have been explored for multifarious CQD-based materials and devices, a comprehensive summary on surface and interface engineering has been rarely reported. In this review, we discuss the surface and interface modification strategies for CQD-based light-driven hydrogen production and emphasize on direct light-driven hydrogen generation systems categorized into photoelectrochemical cells and photocatalysis systems. Furthermore, we describe the recent research advances in this growing field by highlighting various strategies developed for the optimization of surface and interface characteristics, such as core–shell structural design, passivation layer modification, surface ligand optimization, heterostructure construction, co-catalyst loading, and defect engineering. Finally, a future outlook on and the challenges in surface and interface regulation of CQD-based light-driven hydrogen production systems are highlighted. It is expected that this review will stimulate continued interest in harnessing the significant potential of CQDs for solar-to-hydrogen conversion.
Although CQDs exhibit more pronounced quantum and surface properties than macroscopic semiconductor materials,7 CQDs have relatively poor photostability and chemical stability owing to their colloidal properties.8 Moreover, the most commonly used CQDs are binary II–VI and IV–VI CQDs containing toxic heavy metals such as Cd and Pb. Considering the future industrial scale and environmental pollution issues in the field of light-driven hydrogen production, enhancing photostability and chemical stability have become a key focus.9 In addition, there are a large number of defects formed on the surface of CQDs during the colloidal synthesis process, which lead to the recombination of photo-generated carriers on their surface.10
All of the above problems limit the further development of CQDs for light-driven hydrogen production.11 Fortunately, the understanding of the surface and interface characteristics of CQD-based light-driven hydrogen production has dramatically improved in recent years.12–15 Surface ligands, atom regulation and interface modification have been proven as vital tools to optimize the surface and interface properties of CQDs.16–18 For instance, Tong et al. prepared AgInSe CQDs coated with a ZnSe passivation layer using the in situ-growth method and copper incorporation.19 The photoelectrochemical performance of the optimized AgInSe core–shell CQDs delivered a maximum photocurrent density of 9.1 mA cm−2 under standard AM 1.5G illumination. Cai et al. proposed a unique method to tune the surface intragap states of CuInS2 CQDs through surface substitution and distribution of zinc incorporation,20 facilitating slow hot electron relaxation and favoring long-lived charge separation. In addition, molecular iron and heterogeneous platinum co-catalysts loaded on CQDs were studied to improve charge carrier dynamics and chemical catalytic kinetics.21,22 Notably, Li et al. recently designed a CdTe/In2S3 heterostructure photocatalyst to achieve a higher than 100% internal quantum efficiency by combining an interfacial built-in electric field and cascade energy band structure.23
In this review, we aim to provide valuable insights for understanding the surface and interface modification strategies for CQD-based light-driven hydrogen production, especially focusing on the core–shell structural design, passivation layer modification, surface ligand optimization, heterostructure construction, co-catalyst loading, and defect engineering of CQDs (Fig. 1). We first introduce the CQD-based photoelectrochemical and photocatalytic schemes for light-driven hydrogen production and comprehensively evaluate the advantages and disadvantages of the two technical solutions. Second, the surface and interface regulation of CQDs is systematically summarized, followed by the discussion of potential advancements and applications in related technologies. Finally, the last section of this review discusses perspectives on future trends and possible development directions for the surface and interface engineering for CQD-based light-driven hydrogen production.
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Fig. 2 Various direct light-driven hydrogen production systems and their charge flows upon light absorption. (a) PEC systems, (b) photoanode, (c) photocathode, (d) PC systems, (e) photocatalytic H2 evolution using CQDs as light absorbers with surface atoms serving as the active sites for H+ reduction. (f) Technological map showing various light-driven hydrogen production approaches for solar energy conversion. Reproduced with permission from ref. 32, copyright 2019, the Royal Society of Chemistry. Reproduced with permission from ref. 33, copyright 2022, John Wiley and Sons. Reproduced with permission from ref. 34, copyright 2018, Nature Publishing Group. |
Fig. 2b shows photoanode hydrogen generation systems. The N-type semiconductor, acting as the light absorber, forms a semiconductor–liquid junction with the electrolyte. In the case of upward bending of the band, photoexcited holes generated in the valence band participate in the water oxidation reaction to produce oxygen, while conduction band electrons overcome overpotential and voltage losses, getting transferred to the cathode to participate in the water reduction reaction to generate hydrogen. In contrast, the photocathode hydrogen generation systems require a P-type semiconductor as the light absorber. As shown in Fig. 2c, conduction band electrons induced by light radiation directly participate in the water reduction reaction to produce hydrogen. The PC system is similar to the PEC system as it spontaneously produces hydrogen without external bias. As illustrated in Fig. 2d, photocatalysts such as CQDs dispersed in a liquid or film can directly generate hydrogen gas molecules under light excitation.33 Generally, CQD-based photocatalytic hydrogen generation involves three steps: (i) CQDs absorb photons, promoting electron transition from the valence band to the conduction band, leaving behind holes and forming electron–hole pairs. (ii) As shown in Fig. 2e, conduction band electrons and valence band holes migrate to the CQD surface, while some electron–hole pairs are annihilated through direct recombination or captured by defects. (iii) Photo-generated electrons on the semiconductor surface undergo a reduction reaction with surface-adsorbed water molecules or hydrogen ions, producing hydrogen gas. Photo-generated holes engage in an oxidation reaction with surface-adsorbed water molecules or hydroxide ions, generating oxygen gas. Usually, the PC system is simpler compared with the PEC system, as the charge transfer pathways of the photocatalytic system typically range from nanometers to millimeters, requiring a simpler device structure without the need for electrodes, charge collectors, or conductors utilized in the PEC system.
The most critical evaluation parameter for light-driven hydrogen generation performance is the solar-to-hydrogen energy conversion efficiency (ηSTH), reflecting the ratio of produced hydrogen energy to incident solar energy under standard sunlight exposure without external bias.35 The ηSTH can be calculated from the rate of hydrogen evolution using eqn (1):
![]() | (1) |
There are some comprehensive points that should be noted to evaluate light-driven hydrogen production. The faradaic efficiency (FE), defined as the ratio of electrons consumed in hydrogen production to the total electrons transferred in the PEC system, is calculated as follows:
![]() | (2) |
![]() | (3) |
![]() | (4) |
The turnover frequency (TOF) measures intrinsic catalytic activity as H2 production rate per active site:
![]() | (5) |
As shown in Fig. 2f, the research trend of light-driven hydrogen production is clear and obvious.34 PV-EC currently demonstrates higher efficiency values due to the rapid development of photovoltaic and electrolysis technology. However, considering the key factors of system complexity and cost, PEC and PC systems may be more suitable for future large-scale hydrogen production applications. Hence, both PEC and PC technologies offer research possibilities in balancing economic benefits and light-driven hydrogen production performance. Particularly, CQDs can be fabricated and processed in solution under mild conditions, enabling large-area manufacturing and widening the scope of low-cost hydrogen production technologies for the future hydrogen economy landscape.36–43
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Fig. 3 Schematic of surface and interface factors for CQD-based light-driven hydrogen production. Reproduced with permission from ref. 35, copyright 2015, the Royal Society of Chemistry. |
Hence, surface and interface engineering of CQD were widely studied in terms of core–shell structural design, passivation layer modification, surface ligand optimization, heterostructure construction, co-catalyst loading, and defect engineering. It has been proved that the above strategies can promote charge separation, optimize interfacial reaction kinetics, and improve hydrogen production performance.
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Fig. 4 Core–shell structural design and passivation layer modification. (a) TEM image of PbTe@CdTe in the [100] crystal axis direction. (b) TEM image of PbTe@CdTe in the [110] crystal axis direction. (c) Schematic of gradient multi-shell core–shell CQDs prepared using the SILAR method. (d) TEM image of CdSe/(CdSexS1−x)5/CdS. (e) TEM image of CuInSe2/(CuInSexS1−x)5/CuInS2. (f) Current–voltammetry curves of the gradient multi-shell core–shell CQD-sensitized TiO2 photoanode. (g) Schematic of band arrangement and electron–hole spatial distribution wave functions of different core–shell CQDs. (h) Wave function diagram of electron–hole spatial distribution in Cu–AgIn5S8@ZnS core–shell CQDs. (i) TEM image of CuInSexS2−x. (j) TEM image of CuInSexS2−x with ZnS passivation. (k) Current–time curves of CQD-sensitized TiO2 photoanode. Reproduced with permission from ref. 46, copyright 2009, American Chemical Society. Reproduced with permission from ref. 47, copyright 2020, John Wiley and Sons. Reproduced with permission from ref. 48, copyright 2020, the Royal Society of Chemistry. Reproduced with permission from ref. 49, copyright 2017, Elsevier. |
Based on the bandgaps of the core and shell layers,47 as well as the positions of the conduction band bottom and valence band top, core–shell CQDs can be classified into several types: type-I, reverse type-I, type-II, and quasi-type-II shown in Fig. 4g. In type-I core–shell CQDs, the effective bandgap of the shell layer is greater than that in core CQDs. The conduction band bottom and valence band top of the shell layer are located outside the bandgap of core CQDs. In this case, photo-induced charges are confined within the core CQDs, effectively enhancing radiation recombination efficiency and stability. Compared with type-I core–shell CQDs, reverse type-I core–shell CQDs exhibit a reversed band alignment, where the effective bandgap of the shell layer is smaller than that of the core CQDs, allowing both photo-induced electrons and holes to transfer to the shell layer. These core–shell quantum CQDs can efficiently consume photo-induced charges in the photocatalysis or photoelectrochemical process, thus enhancing photo-induced charge transfer efficiency. In typical type-II core–shell CQDs, the bandgaps of the core and shell layers are staggered, with photo-induced holes and electrons restricted to either the core or shell region. When the conduction band bottom or valence band top positions of the core and shell layers align, a quasi-type-II band alignment is formed. One of the photo-induced charges is delocalized at the aligned conduction band bottom or valence band top position, while the other photo-induced charge is restricted. Hence, the core–shell CQDs with quasi-type-II band alignment exhibit less overlap in the spatial distribution of electron–hole wave functions. For type-II and quasi-type-II core–shell CQDs, photo-induced charges can be effectively separated to reduce the probability of charge recombination, which is commonly applied in the fields of PC and PEC. For instance, Guo et al. designed ZnS shell layers with different thicknesses on the surface of Cu–AgIn5S8 CQDs, forming core–shell CQDs with type-II band alignment between the Cu–AgIn5S8 core and ZnS shell layers. To further analyze the spatial distribution of electron–hole wave functions for Cu–AgIn5S8@ZnS core–shell CQDs using theoretical calculation models,48 it was demonstrated that the core–shell CQDs possessed a typical type-II band alignment structure. With increasing ZnS shell layer thickness, photo-induced electrons gradually delocalized from the core to the shell layer. As shown in Fig. 4h, photo-induced holes remained localized within the core, achieving effective charge separation of photo-induced charges. When Cu–AgIn5S8@ZnS core–shell CQDs were utilized to sensitize TiO2 photoanodes, the photocurrent density increased by 1.5 times compared with Cu–AgIn5S8 core CQDs, verifying the excellent charge separation effect of the type-II band alignment structure.
Additionally, Jin et al. reported that ultra-thin ZnS passivation layers could be deposited on the surface of PbS@CdS core–shell CQDs using the SILAR method, expanding the construction methods for passivation layers.54 The work also provides valuable insights for optimizing the performance of the CQD-based photoelectrochemical hydrogen production system. Recently, Xia et al. conducted elemental incorporation in ZnSe-coated AgInSe CQDs with a passivation layer, which can tailor carrier kinetics for high-efficiency solar energy conversion.19 The ZnSe passivation shell with Cu incorporation promoted the trapping of photoinduced holes from AgInSe QDs, resulting in a decelerated recombination of carriers. The prepared core–shell QDs with optimized optoelectronic properties were employed to fabricate QD-PEC devices, delivering a maximum photocurrent density of 9.1 mA cm−2 under standard AM 1.5G illumination. Moreover, the passivation layer prevented QDs from falling off substrates. Wang et al. reported that an ordered Al2O3 passive layer was deposited on the surface of silicon phosphide QDs through atomic layer deposition technology.55 The layer can increase the bonding force between composite materials, thereby improving the stability of the device for photoelectrochemical water splitting.
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Fig. 5 Surface ligand optimization and heterostructure construction. (a) Schematic of ZnSe capped with the MEMI ligand. (b) Self-assembly of negatively charged MPA–CdS with positively charged co-catalysts through electrostatic interaction. (c) PbS capped with OLA, MPA, and I− ions along with the infrared spectrum. (d) Schematic of the heterojunction formed by p-type CuInSe2 and n-type polymer CN. (e) Performance comparison of photocatalytic hydrogen production for CuInSe2 and polymer CN. (f) HAADF-STEM image of the Cu2ZnSnS4 homojunction containing chalcopyrite and zinc blend phases. (g) Local magnified pseudo-color image within the rectangular frame in (f). (h) HAADF-STEM differential phase contrast image of MIL-101-Cr. (i) Schematic of pores filled with TiO2 quantum dots. Reproduced with permission from ref. 60, copyright 2021, the Royal Society of Chemistry. Reproduced with permission from ref. 61, copyright 2018, American Chemical Society. Reproduced with permission from ref. 62, copyright 2021, American Chemical Society. Reproduced with permission from ref. 63, copyright 2020, the Royal Society of Chemistry. Reproduced with permission from ref. 64, copyright 2022, Nature Publishing Group. Reproduced with permission from ref. 65, copyright 2020, Nature Publishing Group. |
Recently, surface ligands have been found to influence the excited states of light absorption for CQDs.66 For example, Asbury et al. utilized mid-infrared transient absorption spectroscopy to reveal the impact of the ligand structure on the absorption states at the CQD boundaries.62 Fig. 5c illustrates the structures of PbS CQDs capped with OLA, MPA, and I− ions. The work determined successful ligand anchoring to the surface of CQDs through infrared spectroscopic characteristics of different ligands. Mid-infrared transient absorption spectroscopy indicated that the intensity of Pb–O coordination bonds on the surface of OLA-capped PbS CQDs decreased upon light excitation, reflecting an increase in the density of photoinduced electrons on the surface of CQDs. Finally, this further affected the ligand mobility and catalytic activity at the interface. Conversely, I−/MPA-capped PbS showed almost no change in the infrared absorption intensity for the surface coordination bonds. However, the energy transfer between neighboring CQDs and the localization of the photoinduced hole resulted in peak shifts in infrared absorption. Similarly, Patzke et al. reported S2−-capped InP/ZnS core–shell CQDs with a short-chain inorganic ligand,67 where S2− ions could trap photoinduced holes of the InP/ZnS CQDs. Hence, the ligands reduced obstacles for photocarrier transfer and achieved adequate charge separation. Ultimately, the S2−-capped InP/ZnS CQDs achieve a TON as high as 128000 for photocatalytic hydrogen production, with a maximum internal quantum efficiency reaching 31%.
In addition to heterojunction construction, Yu et al. successfully synthesized Cu2ZnSnS4 homojunctions containing wurtzite (WZ) and kesterite (KS) phases by regulating the synthesis temperature.64 As shown in Fig. 5f, the high-angle annular dark-field scanning transmission electron microscopy image (HAADF-STEM) shows the coexistence of two different crystal phases within a single nanocrystal. As depicted in Fig. 5g, the locally enlarged HAADF-STEM image in the rectangular region clearly reveals the different atomic arrangements of the two phases. First-principle calculations and optical characterization revealed that the two phases in a single nanocrystal formed a type-II homojunction. Owing to the close contact through chemical bonding in the homojunction, photogenerated charges could be effectively separated.
CQD-based semiconductor heterojunctions have some unique advantages over other heterojunctions, benefiting from the unique optoelectronic properties, such as the multi-exciton effect and quantum tunneling effect.74 For instance, Li et al. discovered that CdTe CQDs would generate high-energy hot electrons upon photon excitation exceeding the bandgap width,23 then producing two pairs of electron–hole pairs through the multi-exciton effect. By utilizing this phenomenon, researchers achieved a maximum internal quantum efficiency of 118% in photocatalytic hydrogen production. Furthermore, Deng et al. reported the synthesis of uniformly sized TiO2 quantum dots through confined growth within mesoporous metal–organic frameworks (MOFs) materials.65 As shown in Fig. 5h and i, the HAADF-STEM differential phase contrast image of MIL-101-Cr, a type of MOF, demonstrates that the MOF possesses uniformly sized mesopores with a diameter of approximately 3.4 nm. In a confined growth environment, TiO2 quantum dots nucleate and grow within the pores, creating a special CQD semiconductor heterojunction inside the porous material. Successfully applied in photocatalysis, the photogenerated electrons of TiO2 CQDs can be stored in the adjacent metal nodes of the MOFs, ultimately achieving nearly a five-fold increase in apparent quantum efficiency.
Additionally, the introduction of cocatalysts can promote the separation of photogenerated charges on the surface of CQDs, preventing recombination of electron–hole pairs and extending the lifetime of photogenerated charges. As shown in Fig. 6a, Martindale et al. introduced a homogeneous Ni cocatalyst into water-soluble carbon CQDs.78 The photogenerated electrons of the carbon CQDs can transfer to the molecular Ni cocatalyst to reduce protons and produce hydrogen molecules. Conversely, without the inclusion of the molecular Ni cocatalyst, carbon CQDs alone can hardly achieve photocatalytic hydrogen production. It is well known that noble metal Pt has been used as an excellent hydrogen evolution catalyst in industrial water electrolysis. Therefore, Wu et al. deposited Pt particles on the surface of CdS CQDs and studied the photocatalytic kinetics of CdS–Pt composite photocatalysts using femtosecond transient absorption (fs-TA) spectroscopy. They found that the average lifetime of ultrafast electron transfer from CdS to Pt is approximately 3.4 ps.83 Additionally, owing to the confined photogenerated holes in CdS, the average lifetime of the separated photogenerated charge state is about 1.2 μs. Subsequently, Stolarczyk et al. deposited Pt particles at both ends of CdS nanowires, achieving spatial separation of photogenerated charges.79 As shown in Fig. 6b, photogenerated electrons participate in the hydrogen evolution half-reaction at both ends of CdS nanowires, while photogenerated holes participate in the oxygen evolution half-reaction in the middle of CdS nanowires assisted by the homogeneous Ru cocatalyst. As depicted in Fig. 6c, fs-TA spectroscopy revealed the transfer lifetime of photogenerated charges. It can be observed that homogeneous cocatalysts exhibit a faster femtosecond-level lifetime of charge transfer compared with the heterogeneous cocatalyst. The TEM image in Fig. 6d also confirms that Pt particles were selectively deposited at both ends of CdS nanowires.
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Fig. 6 Co-catalyst loading and defect engineering. (a) CQD-based photocatalytic hydrogen production with a homogeneous co-catalyst. (b) Schematic of hydrogen production by CdS assisted with a metal Pt co-catalyst. (c) Schematic of photogenerated charge transfer for CdS–Pt. (d) TEM image of CdS–Pt. (e) Construction of a Zn1−xMxS co-catalyst layer via cation exchange. (f) Gibbs free energy calculation of the catalytic hydrogen evolution reaction for CdSe/Zn1−xFexS. (g) Schematic of Cu2S–Cu–V CQDs with surface copper vacancy defects. (h) Energy spectrum line scan of Cu2S–Cu–V. (i) High-resolution TEM image of Cu2S–Cu–V. (j) Schematic of the CQD-derived catalyst with metal vacancy defects. (k) HAADF-STEM image of the CQD-derived catalyst. (l) Corresponding three-dimensional image of the CQD-derived catalyst. Reproduced with permission from ref. 78, copyright 2015, American Chemical Society. Reproduced with permission from ref. 79, copyright 2018, Nature Publishing Group. Reproduced with permission from ref. 80, copyright 2020, Elsevier. Reproduced with permission from ref. 81, copyright 2018, Nature Publishing Group. Reproduced with permission from ref. 82, copyright 2019, Elsevier. |
Furthermore, cocatalysts can be applied as the passivation shell on the surface of CQDs, optimizing catalytic kinetics and passivating surface defects. As shown in Fig. 6e, Wu et al. recently used the cation exchange method to construct Zn1−xMxS cocatalyst layers on the surface of CdSe/ZnS CQDs,80 where M can be Fe, Co, or Ni. It was found that CdSe/ZnS CQDs covered with the Zn1−xMxS cocatalyst layer exhibit superior photocatalytic hydrogen production performance compared with CdSe/ZnS CQDs. The density functional theory calculations also support the experimental conclusions presented in Fig. 6f. Compared with CdSe/ZnS CQDs, CdSe/Zn1−xFexS CQDs exhibit lower Gibbs free energy for the intermediate H*, which is advantageous for optimizing the catalytic kinetics for hydrogen evolution reactions.
Types of surface and interface engineering | QDs | PEC/PC system | Activity | STH | Stability | Ref. |
---|---|---|---|---|---|---|
Co-catalyst loading | CdSe | Photocathode | −2.14 mA cm−2 at 0 V vs. RHE | — | 91.7% at 6 h | 9 |
Surface ligand optimization | ZnCuInS2 | Photocathode | −0.68 mA cm−2 at 0 V vs. RHE | 0.65% | 99.9% at 2 h | 14 |
Core–shell structural design | CuInSe2/ZnS | Photoanode | 6.0 mA cm−2 at 1.0 V vs. RHE | — | 63% at 2 h | 15 |
Defect engineering | CuInSe2 | Photoanode | 10.7 mA cm−2 at 0.6 V vs. RHE | — | — | 86 |
Surface ligand optimization | ZnCuInS2 | Photoanode | 3.8 mA cm−2 at 1.23 V vs. RHE | 0.54% | 99.9% at 2 h | 14 |
Core–shell structural design | AgInS2/ZnS | Photoanode | 6.4 mA cm−2 at 1.0 V vs. RHE | — | 70% at 2 h | 18 |
Passivation layer modification | AgInSe2 | Photoanode | 9.1 mA cm−2 at 1.0 V vs. RHE | — | 64% at 2 h | 19 |
Co-catalyst loading | Ti3C2 | Photoanode | 2.9 mA cm−2 at 1.23 V vs. RHE | — | 10 h | 74 |
Core–shell structural design | MXene@Carbon | Photoanode | 3.6 mA cm−2 at 1.23 V vs. RHE | — | 8 h | 75 |
Defect engineering | CuZnInSe | Photoanode | 11.2 mA cm−2 at 0.8 V vs. RHE | — | 61% at 2 h | 86 |
Core–shell structural design | AgInSe2/ZnSe | Photoanode | 7.5 mA cm−2 at 1.0 V vs. RHE | — | 70% at 2 h | 36 |
Defect engineering | InP | Photoanode | 7.4 mA cm−2 at 0.8 V vs. RHE | — | 75% at 2 h | 37 |
Heterostructure construction | ZnAgInSe2 | Photoanode | 6.7 mA cm−2 at 0.9 V vs. RHE | — | 71% at 1 h | 38 |
Defect engineering | ZnCuInS2 | Photoanode | 4.1 mA cm−2 at 0.6 V vs. RHE | — | 76% at 1 h | 39 |
Core–shell structural design | AgGaS2/CdSeS | Photoanode | 4.8 mA cm−2 at 0.9 V vs. RHE | — | — | 40 |
Defect engineering | Mn–CuInS2 | Photoanode | 5.7 mA cm−2 at 0.9 V vs. RHE | — | 70% at 1 h | 41 |
Core–shell structural design | CuInS2/CdS | Photoanode | 6.0 mA cm−2 at 0.8 V vs. RHE | — | 78% at 1 h | 42 |
Passivation layer modification | AgInS2 | Photoanode | 5.7 mA cm−2 at 0.9 V vs. RHE | — | 38% at 1 h | 43 |
Heterostructure construction | CuInSeS | Photoanode | 3.2 mA cm−2 at 1.23 V vs. RHE | 0.69% | 87% at 2 h | 44 |
Core–shell structural design | CuInSe/CuInSeS/CuInS | Photoanode | 4.5 mA cm−2 at 0.8 V vs. RHE | — | 83% at 2 h | 50 |
Core–shell structural design | AgIn5S8/ZnS | Photoanode | 10.6 mA cm−2 at 0.7 V vs. RHE | — | 50% at 2 h | 48 |
Passivation layer modification | CuInSeS/CdSeS | Photoanode | 5.3 mA cm−2 at 0.7 V vs. RHE | — | 78% at 2 h | 49 |
Core–shell structural design | PbS/CdS | Photoanode | 11.2 mA cm−2 at 0.9 V vs. RHE | — | 71% at 2 h | 54 |
Surface ligand optimization | CdS | Photocatalyst | 0.9 mmol g−1 h−1 | — | 45 h | 56 |
Surface ligand optimization | ZnSe | Photocatalyst | 7.5 mmol g−1 h−1 | — | 10 h | 60 |
Surface ligand optimization | CdS | Photocatalyst | 0.6 μmol h−1 | — | 120 h | 61 |
Core–shell structural design | InP/ZnS | Photocatalyst | 15 μmol h−1 | — | 100 h | 67 |
Heterostructure construction | Zn–AgIn5S8/Fe2O3 | Photocatalyst | 1.7 mmol g−1 h−1 | — | 36 h | 68 |
Heterostructure construction | CuInSe2 | Photocatalyst | 240 μmol h−1 | — | 20 h | 63 |
Heterostructure construction | Cu2GaSnS4 | Photocatalyst | 321 μmol g−1 h−1 | — | 24 h | 64 |
Co-catalyst loading | Carbon QDs | Photocatalyst | 398 μmol g−1 h−1 | 1.4% | 28 h | 78 |
Co-catalyst loading | CdS | Photocatalyst | 23 μmol h−1 | — | 20 h | 79 |
Passivation layer modification | CdSe/ZnFeS | Photocatalyst | 400 μmol h−1 | 0.12% | 60 h | 80 |
Defect engineering | ZnCuInS2 | Photocatalyst | 5.3 mmol g−1 h−1 | — | 120 h | 93 |
Heterostructure construction | CuInS2 | Photocatalyst | 10.72 mmol g−1 h−1 | — | 2 h | 12 |
Defect engineering | ZnCuInS2 | Photocatalyst | 50.4 mmol g−1 h−1 | — | 24 h | 20 |
Heterostructure construction | ZnAgInS2 | Photocatalyst | 13.1 mmol g−1 h−1 | — | 5 h | 22 |
Heterostructure construction | CdTe | Photocatalyst | 0.1 mmol h−1 | 1.31% | 100 h | 23 |
(1) These strategies are applicable to both PEC and PC hydrogen production systems.
(2) Current research predominantly focuses on photoanodes and photocatalytic systems, and rarely on photocathodes, which is largely owing to the lack of porous photocathode substrates capable of efficiently loading QDs.
In total, the surface and interface modification engineering of QDs has emerged as a pivotal technical approach to advancing photo-driven hydrogen evolution.
(1) More investigation needs to be undertaken to reveal the exact processes and mechanisms in view of the surface and interface of CQDs. Owing to the small size of CQDs, the local environment and state of surface and interface atoms are dynamically changed during the light-driven hydrogen production process, mainly because of photogenerated potential and solvent corrosion. Consequently, the precise identification of surface and interface sites and the exploration of mechanisms based on ex situ characterizations are impeded. Therefore, advanced in situ analytical techniques and operando microscopy should be applied to understand the surface and interface of CQDs. In situ TA is a powerful research tool to detect the surface defects of CQDs.
(2) The reported CQD-based light-driven hydrogen production systems still do not meet the requirements for commercial application, such as the target ηSTH of over 10%. Nevertheless, possible strategies could involve the abovementioned surface and interface engineering to unlock the full potential of CQDs. For example, the combination of surface and interface engineering on a monolithic CQD-based light-driven hydrogen production system may provide an incredibly powerful and orthogonal toolbox.
(3) The stability of CQD-based light-driven hydrogen production system remains crucial. For a practical hydrogen production system, it is not the only key to focus on high activity for hydrogen production. Long-term stability of QD-based hydrogen production systems is critical for continuous solar to hydrogen fuel conversion. Despite the rational design of a variety of surface and interface engineering approaches to enhance the photostability of QDs and QD-based photoelectrodes, it is still the key weakness compared with other bulk semiconductor materials owing to relative general stability. More detailed and in-depth investigations of appropriate approaches should be exploited to further improve the stability while maintaining high activity.
Owing to emerging challenges and new opportunities, recent works have proposed collaborative strategies, simultaneously optimizing the core–shell layers and designing gradient doped structures. This will be crucial for advancing light-driven hydrogen production systems beyond CQD-based limitations.
Footnote |
† Mengke Cai and Shuai Huang are co-first author. |
This journal is © The Royal Society of Chemistry 2025 |