Nisha
Kushwah
*a,
G.
Kedarnath
*ab,
V.
Sudarsan
a and
A. P.
Srivastava
c
aChemistry Division, Bhabha Atomic Research Centre, Mumbai-400 085, India. E-mail: kedar@barc.gov.in; knisha@barc.gov.in
bHomi Bhabha National Institute, Anushaktinagar, Mumbai-400 094, India
cMaterials Science Division, Bhabha Atomic Research Centre, Mumbai-400 085, India
First published on 17th November 2022
ZnIn2S4 (ZIS), a ternary semiconductor with photo-absorption in the visible region of the solar spectrum, is a promising active material for catalysis, optoelectronics and photoconductors and exists in various morphologies. Synthesis of phase-pure ZIS nanocrystals (NCs) devoid of any binary or biphasic impurities is highly necessary for device applications. The present investigation deals with facile synthesis of hexagonal phase ZIS spherical NCs by thermolysis of tris isopropylxanthate of indium and bis isopropylxanthate of zinc in oleylamine (OAm) at 280 °C for different durations (10, 15 and 20 min). The crystal structure, phase purity, elemental composition, morphology and band gap of the as-synthesized ZIS NCs were thoroughly evaluated by powder X-ray diffraction (pXRD), Raman, energy dispersive X-ray spectroscopy (EDS), electron microscopy tools and diffuse reflectance spectroscopy (DRS), respectively. The size-dependent optical band gap and emission maximum were tuned in the range of 3.18 to 2.40 eV and 440 to 528 nm by adjusting the reaction time from 10 to 20 minutes. Size-dependent quantum yields (QYs) in the range of 7–11% have been achieved for these NCs. Lifetime measurements performed on these samples show lifetimes in the range of 1.3–1.5 ns for the fast-decaying component and 5.7–7.3 ns for the slow decaying component.
ZIS is a layered-structure semiconductor that exists in three crystal polymorphs, namely cubic, hexagonal and rhombohedral lattices. The hexagonal phase is thermodynamically more stable than the cubic phase and the ions are arranged in S–Zn–S–In–S–In–S septuple layers, where all the Zn2+ and half of the In3+ ions are tetrahedrally coordinated by sulfur atoms, and the other half of the In3+ ions are octahedrally coordinated.12 In contrast, in cubic ZIS, Zn2+ ions are tetrahedrally coordinated by S2− ions and In3+ ions are octahedrally coordinated. These phases are interconvertible at different conditions of temperature and pressure.13 Furthermore, the phase of ZIS governs the properties and the applications of ZIS. For example, for the photodegradation of rhodamine B, hexagonal ZIS shows high photoactivity, whereas for methyl orange the photoactivity is relatively low. In contrast, cubic ZIS behaves in exactly the opposite way.14 The cubic form of ZIS finds application as a thermoelectric material,15 whereas hexagonal ZIS exhibits the properties of photoconductivity and photoluminescence.16,17
To date, a number of synthetic routes such as spray pyrolysis,18 spin coating,19 hydrothermal,20,21 solvothermal,12,22 ultrasonic,23 chemical vapour deposition and microwave assisted24 methods are available for the synthesis of ZIS materials which govern the material’s morphology and its application. Various morphologies of ZIS such as quantum dots,4 nanoparticles,25 nanotubes,26 nanoribbons,27 nanowires,28 microspheres29 and micropeonies30 have been synthesised and found application in various fields. The morphology of ZIS plays a significant role for determining its application. ZIS nanosheets have been tested as light-harvesting components of a photoelectrochemical system and showed a promising light-to-current conversion efficiency.31 Whereas, ZIS nanotubes and nanowires were found to have highly efficient photocatalytic activity to degrade organic pollutants in aqueous solutions.13 However, synthesis of luminescent ZIS NCs is scanty. Although tunable luminescent ZIS NCs with different amounts of Zn incorporation have been reported,32 size-dependent luminescent ZIS NCs have not been investigated to the best of our knowledge.
Furthermore, the scalability and applicability of the above synthetic protocols are restricted by the use of either sensitive/toxic chemicals or the use of multiple metal salts and sulfur sources leading to the addition of binary sulfide impurities. In addition, the optical properties of ternary semiconductors are strongly influenced by their crystallinity, structural defects and chemical purity. Therefore, it is essential to have a facile, easily controllable and scalable synthesis strategy to produce luminescent ZIS nanostructures.
One such method to synthesize phase pure multinary metal sulfides employing metal xanthates and thiocarbamates has been explored and established by Lewis33–35 and Revaprasadu’s group.36–38 These metal xanthates being single source molecular precursors (SSMPs) have advantages over the normal metal salt precursors for the synthesis of ternary ZIS NCs. The existence of preformed M–S bonds in SSMPs can assist the formation of a single-phase ternary compound, thereby avoiding the formation of various secondary phases including binary metal sulfides which otherwise are formed when normal metal salt precursors are used as starting materials. Recently, our group successfully isolated Cu2GeS3 NCs by utilizing metal xanthates.39 However, metal xanthates have not been employed for the preparation of luminescent ZIS NCs. Encouraged by these results and having a cognizance of the versatility and merits of metal xanthates, luminescent ZIS NCs were synthesized by simultaneous thermolysis of [In(S2COPri)3] and [Zn(S2COPri)2] in OAm at 280 °C. Additionally, size-dependent optical property tunability of ZIS NCs with QYs in the range of 7–11% has been achieved. The application of these molecular precursors presents a simple way to access environmentally friendly ZIS NCs with optoelectronic potentiality.
SEM and EDS measurements were carried out on a Zeiss Gemini Sigma 500. A Zeiss Libra 200 FE transmission electron microscope (TEM) operating at an accelerating voltage of 200 kV was used for the TEM studies. The samples for TEM were prepared by placing a drop of sample dispersed in chloroform on a carbon-coated copper grid.
Optical diffuse reflectance measurements in the range 200–1800 nm (0.68 to 6.2 eV) were performed on a JASCO V-670 two-beam spectrometer with a diffuse reflectance (DR) attachment consisting of an integration sphere coated with barium sulfate which was used as a reference material. Measured reflectance data were converted to absorption (A) using the Kubelka–Munk remission function.41 The band gaps of the samples were estimated by extrapolating the linear portion of the plot to the X (energy) axis.
All luminescence measurements were carried out at room temperature using an Edinburgh Instruments FLSP 920 system, with a 450 W Xe lamp and 60 W microsecond flash lamp. QYs were measured using an integrating sphere coated with BaSO4. All emission spectra were corrected for the detector response and excitation spectra for the lamp profile. Emission measurements were carried out with a resolution of 5 nm.
Time-resolved emission measurements: time-resolved fluorescence measurements were carried out using a time-correlated-single-photon-counting (TCSPC) setup (IBH, UK). In the present work, a 451 nm diode laser (∼100 ps, 1 MHz repetition rate) was used as the excitation source and a TBX-4 detector was used for fluorescence detection. A re-convolution procedure was used to analyze the observed decays using a suitable instrument response function obtained by substituting the sample cell with a light scatterer (suspension of TiO2 in water). With the present setup, the instrument time resolution was adjudged to be better than 50 ps. The fluorescence decays were analyzed as a sum of exponentials where, I(t) is the time-dependent fluorescence intensity and Bi and τi are the pre-exponential factor and the fluorescence lifetime for the ith component of the fluorescence decay. The quality of the fits and consequently the mono or bi-exponential nature of the decays was judged by the reduced chi-squared (χ2) values and the distribution of the weighted residuals among the data channels. For an acceptable fit, the χ2 value was close to unity and the weighted residuals were distributed randomly among the data channels.
ZnSO4·7H2O + 2KS2COPri → [Zn(S2COPri)2] + K2SO4 | (R1) |
InCl3 + 3KS2COPri → [In(S2COPri)3] + 3KCl | (R2) |
With this objective, ZIS nanocrystals have been synthesized by thermolysis of [Zn(S2COPri)2] (1) and [In(S2COPri)3] (2) in OAm at 280 °C. The selection of OAm as a passivating agent is based on its suitable boiling point (360 °C) required for thermolyzing the complexes to obtain nanocrystals of targeted size and composition. Furthermore, OAm catalyses the thermal degradation of both complexes at a relatively lower temperature compared to their decomposition temperature in the absence of OAm.45 In addition, the nitrogen of the amino group has good affinity for both indium and zinc which can facilitate the passivation of nanocrystals. In a typical synthesis, a 1:1 molar mixture of both the complexes was taken together in a three necked flask containing OAm under an argon atmosphere and heated slowly. The turbid reaction mixture turns into a clear solution at around 150 °C which subsequently becomes yellow at 250 °C. The heating was continued up to 280 °C. The nanocrystals of different sizes were isolated at intervals of 10, 15 and 20 minutes from the start of the reaction in order to evaluate the tunability of their optical properties. In the present investigation, experiments were carried out at a single temperature to understand the effect of single source precursor and growth time on the structural and optical properties of the material. Many xanthates in general have relatively high decomposition temperatures. Therefore, the high alloying temperature of ZnS and In2S3 to form ZnIn2S4, prompted us to select a high reaction temperature of around 280 °C.
Fig. 1 XRD patterns of ZIS NCs isolated at 10, 15 and 20 minutes of thermolysis of [Zn(S2COPri)2] (1) and [In(S2COPri)3] (2) overlaid on the standard hexagonal ZIS XRD pattern (JCPDS 72-0773). |
Time intervals at which aliquots were collected (min) | Average crystallite sizea (nm) | Particle size by TEM (nm) | EDS analysesb |
---|---|---|---|
a Average crystallite size calculated from pXRD using the Scherrer equation. b EDS analyses in atom % ratio of the constituent elements. | |||
10 | 2.5 | 2.9 | 14.3:25.6:60.1 (1:1.8:4.20) |
15 | 4.8 | 5.2 | 13.8:29.1:57.1 (1:2.1:4.1) |
20 | 7.89 | 8.5 | 15.5:28.9:55.6 (1:1.86:3.60) |
The phase purity of ZIS NCs was further assessed by Raman spectroscopy due to the difficulty in identifying binary phase impurities present in ternary materials by pXRD alone. Furthermore, Raman spectroscopy gives direct information about the phonon modes of nanocrystalline materials. The Raman spectrum of a typical sample shown in Fig. 2 displays peaks at 182 (Eg), 271 (F1u (LO1)), and 339 (F1u (LO2)) cm−1, and a shoulder peak at 312 (F1u (TO2)) cm−1.46 The bands appearing at 271 cm−1 may be assigned to (Zn/In)–St in tetrahedral sites.47 The Raman phonon modes seen at 271, 312, and 339 cm−1 may be assigned to F1u symmetry and are Raman forbidden, however, the assignment was justified by Unger et al. by considering the modes as Fröhlich electron–phonon interaction and deformation potential scattering.48 The homogeneous distribution of the constituent elements within the nanocrystals was further corroborated by 2-D elemental mapping (Fig. S5, ESI†).
All the isolated ZIS NCs were characterized by TEM, SAED and HRTEM (Fig. 3) to elucidate the shape, size and phase of the nanocrystals. TEM images revealed that ZIS NCs were spherical in shape with sizes of 2.5, 5.2 and 8.5 nm, respectively for 10, 15 and 20 minutes. Histograms depicting the particle distributions of the same are shown in the insets of Fig. 3a–c. The SAED image of NCs isolated at 10 min (Fig. 3d) exhibits concentric circles corresponding to (004), (101), and (104) planes of the hexagonal phase of ZIS (ICSD No. 016200 and JCPDS-72-0773) and a circular pattern pointing to their polycrystalline nature. Similarly, SAED patterns of ZIS NCs collected at 15 (Fig. 3e) and 20 minutes (Fig. 3f) revealed a set of planes (106), (008) and (1014), and (004), (102) and (106) matching with the same phase of ZIS. The dot-like pattern signifies the single crystalline nature. Furthermore, HRTEM images of ZIS NCs isolated at 10 (Fig. 3g), 15 (Fig. 3h) and 20 (Fig. 3i) min, displaying lattice fringes with d spacings of 2.9, 4.9 and 6.1 Å, respectively corresponding to (104), (005), and (004) planes confirm the hexagonal phase of ZIS (ICSD No. 016200 and JCPDS-72-0773).
The formation of spherical NCs of different sizes with an increase in the reaction time for a fixed temperature may be explained as follows. The formation of any NCs involves nucleation and growth steps. A number of factors control the nucleation and growth process of the nanocrystals. Temperature is one such factor which can thermodynamically and kinetically control these processes, leading to different sizes and shapes of the NCs.2,49 However, at a relatively high reaction temperature as in the present investigation (280 °C), the product NC formation is thermodynamically controlled. Furthermore, both surface diffusion and precursor desorption are expected at such a high temperature. Therefore, nuclei grow isotropically resulting in the formation of symmetrical structures like spheres in order to minimize the surface energy of NCs for a given nanocrystal volume.2 Additionally, when the reaction temperature is fixed and the reaction time is increased from 10 to 20 minutes, the amount of precursor depletes steadily and the average NC size continues to increase through Ostwald ripening.
F(R) = A(hν − Eg)n/2 | (1) |
The optical direct band gap values of ZIS nanocrystals isolated at 10, 15 and 20 minutes were found to be 3.18, 2.92 and 2.40 eV, respectively (Fig. 4), which are close to the reported values.2 These values indicate a red shift in band gap with an increase in the reaction time and hence particle size. A similar trend was observed when the band gap was calculated from emission maxima of PL emission spectra measured in solution (toluene). The emission spectra are usually solvent dependent and shifts are due to changes in solvent polarity and solvent relaxation, hence a lower value of band gap was observed here (reaction time (Eg): 10 min (2.81 eV), 15 min (2.57 eV) and 20 min (2.35 eV)). Although the exciton Bohr radius of ZIS has not yet been reported in the literature, the considerable blue shift of the band gap values for ZIS10 and ZIS15 relative to the bulk band gap may have resulted from the quantum confinement effect.
The photoluminescence studies of ZIS NC aliquots (ZIS10, ZIS15 and ZIS20) show that the emission properties were tunable in the range of 440 to 528 nm. The emission spectra of ZIS NCs (Fig. 5) isolated at 10, 15 and 20 minutes exhibit broad emission peaks with maxima at 440, 483 and 528 nm, respectively, for an excitation wavelength of 345, 374 and 416 nm. The gradual shift in emission maxima from 440 to 528 nm is due to the increase in ZIS NC particle size. Large differences in Eg values estimated from DRS and photoluminescence studies (Table 2) suggest that multiple excitonic levels do exist near the band edges in these samples.
Fig. 5 Photoluminescence emission spectra of ZIS NCs isolated at (a) 10, (b) 15 and (c) 20 minutes of thermolysis of [Zn(S2COPri)2] (1) and [In(S2COPri)3] (2) in OAm at 280 °C. |
Time intervals at which aliquots were collected (min) | Excitation maximum (nm) | Emission maximum (nm) | FWHM of emission peaks | E g(direct) from emission maximum (in eV) | E g(direct) from DRS (in eV) | QY (%) |
---|---|---|---|---|---|---|
10 | 345 | 440 | 80.45 | 2.81 | 3.18 | 11 |
15 | 374 | 483 | 77.7 | 2.57 | 2.92 | 9 |
20 | 416 | 528 | 104 | 2.35 | 2.40 | 7 |
The quantum yields (QYs) of these ZIS NCs were 11, 9 and 7%, respectively (Table 2). With the increase in particle size, the probability of electrons and holes in the particle meeting decreases and this leads to a reduced extent of electron–hole recombination and subsequent decrease in the quantum yield values. Based on the theory of excitons,54 the oscillator strength (fex) of the exciton (electron–hole) recombination is given by the following expression (eqn (2))
(2) |
It may be noted that the QY values reported in the present study are better than those reported for Zn3In2S6 quantum dots.4 Furthermore, the relative concentration of carriers on the particle's surface increases with a decrease in particle size. As measured lifetime is inversely proportional to the sum of the radiative and non-radiative recombination probabilities (Arad + Anrad), lifetime is expected to decrease with a decrease in particle size. Indeed, it is observed in the present study that the lifetime of ZIS NCs decreases with a decrease in particle size and this aspect is discussed in the following section.
I(t) = A1·exp(−t/τ1) + A2·exp(−t/τ2) | (3) |
(4) |
Fig. 6 TRPL decay spectra of ZIS NCs isolated at 10, 15 and 20 minutes of thermolysis of [Zn(S2COPri)2] (1) and [In(S2COPri)3] (2) in OAm at 280 °C. |
Sample | Particle size | Exi 440 nm; Ems = 510 nm | ||||
---|---|---|---|---|---|---|
τ 1 (ns) | A 1 (%) | τ 2 (ns) | A 2 (%) | τ A (ns) | ||
ZIS10 | 1.47 | 46.31 | 5.73 | 53.69 | 4.958141 | |
ZIS15 | 1.36 | 40.88 | 6.23 | 59.12 | 5.591295 | |
ZIS20 | 1.30 | 80.47 | 7.31 | 19.53 | 4.768469 |
Footnote |
† Electronic supplementary information (ESI) available: Additional figures. See DOI: https://doi.org/10.1039/d2nj05175c |
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