Open Access Article
Alberto
Jiménez-Solano‡
a,
Laura
Martínez-Sarti
b,
Antonio
Pertegás
b,
Gabriel
Lozano
*a,
Henk J.
Bolink
*b and
Hernán
Míguez
a
aInstituto de Ciencia de Materiales de Sevilla, Consejo Superior de Investigaciones Científicas-Universidad de Sevilla, Calle Américo Vespucio 49, 41092, Sevilla, Spain. E-mail: g.lozano@csic.es
bInstituto de Ciencia Molecular (ICMol), Universidad de Valencia, Calle Catedrático José Beltrán 2, 46980, Paterna, Spain. E-mail: henk.bolink@uv.es
First published on 5th November 2019
Herein, we analyze the temporal evolution of the electroluminescence of light-emitting electrochemical cells (LECs), a thin-film light-emitting device, in order to maximize the luminous power radiated by these devices. A careful analysis of the spectral and angular distribution of the emission of LECs fabricated under the same experimental conditions allows describing the dynamics of the spatial region from which LECs emit, i.e. the generation zone, as bias is applied. This effect is mediated by dipole reorientation within such an emissive region and its optical environment, since its spatial drift yields a different interplay between the intrinsic emission of the emitters and the local density of optical states of the system. Our results demonstrate that engineering the optical environment in thin-film light-emitting devices is key to maximize their brightness.
As with all optoelectronic devices,12,13 light management in LECs is also essential to optimize the emission process. The efficiency of a device to shine light depends on its capability of generating photons in the active layer (ηint) and the effectiveness with which such photons exit the device (ηext). Indeed, on the one hand, ηint is the intrinsic quantum yield of the emitter defined by the ratio between its radiative and total decay rate. It is affected by the local density of optical states (LDOS), which is given by the optical environment of the emitter.13,14 On the other hand, ηext is the extraction efficiency given by the fraction of generated light that is radiated into free space, which is determined by the architecture of the device. A judicious design of the optical environment of the active layer should allow boosting light–matter interaction and thus maximizing the luminous power output of the device.15 Despite its simple device architecture, understanding the dynamics of both injected electrical charges and ions along with the drift of the generation zone with the operation time in LECs presents considerable scientific challenges. Indeed, significant efforts have been made in the last years to unravel the working principle and properties of these emitting devices. In particular, researchers have performed a thorough spectroscopic analysis of the emission of LECs and observed a spectral shift in the emission spectrum, which has been attributed to dynamic changes of the generation zone.16–22 The effects of ionic mobility, dielectric constant, temperature, and local electric field on LEC operation have also been investigated.23–28 Additionally, other works have focused on the development of models that combine optical and electrical characteristics.29–32 At the same time, the electric field that builds up along the active layer during operation must have an effect on the orientation of the light emitting molecules, which should in turn affect the intensity of the extracted radiation. Comprehending the interplay between the effect of the LDOS and that of dipole reorientation as voltage is applied should contribute to shedding some light on the temporal evolution of the intensity and the spectral content of the EL in LECs.
In this paper, we demonstrate that the joint effect of dipole reorientation and the optical environment of the emissive region determines the brightness and the directionality of the device with high precision. Correlation of the temporal evolution of all features of the device electroluminescence with that of the generation zone is unambiguously established. Our study is based on the characterization of a set of LECs based on an Ir-complex as the active material. We measured the angular dependence of the EL of these devices as a function of operation time in a fast and reliable way using an optical setup based on Fourier microscopy. We observed that the emission peak reduces and shifts to shorter wavelengths when the emission angle becomes larger, and as a function of the operation time. To analyse the observed behaviour, we developed a rigorous optical model based on finite-difference time-domain (FDTD). We have simulated the spectral dependence of the power radiated into free space (Pout) by a set of dipoles, whose relative orientation changes with time, embedded in the generation zone as a function of its position in such a region within the active layer. Our results highlight the relevance of tuning the optical environment of active layers in thin-film light-emitting devices in order to optimize their performance.
:
1 in a mixture of butan-2-one and anisole (3
:
2). The solution was filtered through 0.25 μm pore filters and immediately spin-coated on the substrate at 1000 rpm for 60 s. The devices were then transferred to an inert atmosphere glovebox (<0.1 ppm O2 and H2O), where a layer of aluminium (the top electrode) was thermally deposited onto the devices using an Edwards Auto500 chamber integrated in the glovebox. The layout of the fabricated LECs is: glass/ITO (130 nm)/PEDOT:PSS (80 nm)/Ir complex: JF317 (400 nm)/Al2O3 (5 nm)/Al (80 nm). The 5 nm Al2O3 layer was introduced in the model to account for a thin passivation layer over the Al electrode. The thickness of all films was determined using an Ambios XP-1 profilometer. The active area of each pixel in the devices is 6.534 mm2. LECs were not encapsulated.
The collection spot size is 82 microns in diameter. An optical fiber (100 μm core diameter) connected to a spectrophotometer (Ocean Optics, USB2000 + UV-vis) scanned the plane across its diameter. We performed EL measurements right after the current was applied. We also measured different areas of the same device and observed no significant difference.
, where fi and yi are simulated and experimental data, respectively) stabilized (ε < 10−6) or the maximum number of generations (106) was reached. However, the later stopping criterion was never reached with these conditions. The optical constants of the different materials involved in the calculations are shown in the ESI† (Fig. S1).
To evaluate the impact of LDOS on the EL of LECs, we characterize its angular dependence for several devices using reciprocal space imaging, as explained in the Materials and methods section. LECs were driven using a pulsed current source since non-steady state driving slows down the growth of doped zones and thus improves the stability of the emission. Fig. 2a shows the angular dependence of the EL spectra of a representative device. Results of the characterization of other devices are shown in the ESI† (Fig. S2). Measurements reveal a close-to-Lambertian angular emission profile for this planar device. Interestingly, a small blue shift in the maximum of the EL is observed when comparing the spectra measured at a direction close to the normal with that measured at a larger angle (θ = 36 deg), λ = 579 nm vs. λ = 575 nm. Additionally, upon applied bias, the EL spectra further shift to shorter wavelengths and reduce in intensity with operation time, as Fig. 2b displays. However, both the spectral shift and the decrease in EL intensity are fully reversible after turning off the device. These observations are reproducible over the full set of devices characterized (Fig. S2, ESI†).
In order to shed some light on the origin of this spectral shift, we simulate the power radiated by randomly oriented dipoles embedded in the 400 nm-thick active layer of a LEC using FDTD. Fig. 3a shows the spectral dependence of Pout of such a dipole depending on its exact position within the active layer. Bright spots in the map reveal the spatial positions at which power radiated into free space is maximized, which highlights the influence of the LDOS. Notice that the number of bright spots in the map is directly related to the thickness of the active layer and originates from interference effects. In particular, calculations (not shown) indicate that a 200 nm-thick active layer only fits one mode and therefore yields a sole maximum of Pout. In order to model the emission in LECs, we assume that the EL of the device originates from a collection of dipoles emitting within the generation zone according to a Gaussian distribution defined by the parameters μ and σ, which relate to the mean value and the full width at half maximum
of the distribution, respectively. Notice that μ represents the central position of the generation zone, whereas σ is proportional to the width of such a region. We use an optimization code based on a genetic algorithm to vary both parameters μ and σ, along with γ that relates to the reorientation of dipoles along the z-axis, in order to fit simultaneously the angular and the spectral distribution of the EL intensity for each operation time. As a result, we obtain a Gaussian distribution with μ = 270 nm and σ = 37 nm – see grey curve in Fig. 3a – that defines the generation zone of the LEC at the initial time. The model reveals that the generation zone is slightly displaced from the center towards the cathode and its width is roughly one tenth of the total thickness of the active layer (400 nm), which agrees with previous observations.6,13 Notice that the delicate interplay between conductivities and mobilities of the n- and p-doped regions along with that of the undoped regions determines the position of the generation zone, which may move towards the cathode (or the anode) when the conductivity of the p type layer increases more rapidly than that of the n-type layer (or viceversa). FDTD calculations of the full angular distribution of Pout of dipoles distributed over such a generation zone are shown in the ESI† (Fig. S2). Fitting measurements at different operation times allow extracting the temporal evolution of the generation zone and the fraction of dipoles oriented along the z-axis, and therefore to simulate the angular dependence of the EL intensity with time. Fig. 3b displays the time evolution of the generation zone. Our model shows that the emissive region moves a few nanometers to the anode as it slightly broadens with the operation time. Fig. 3c shows that the relative contribution of dipoles oriented along the z-axis to Pout increases from γ = 0.33 to γ = 0.60. This indicates that the dipoles gradually line up with the external electric field as bias is applied, which causes a significant reduction in the EL intensity since dipoles oriented along the z-axis mainly radiate in the xy-plane. Calculations reproduce: (i) the blue shift of the EL with the emission angle observed experimentally, which originates from the change in location where light is generated with time, and (ii) the decrease in EL intensity with time associated with the reorientation of dipoles. Indeed, Fig. 3d displays such a temporal evolution for maximum Pout, and the spectral position at which this value is attained for two different angles, i.e. θ = 11 deg and θ = 36 deg. Fair agreement is found between measurements and calculations, as further illustrated in Fig. 3e–f, where EL spectra at two different times (t = 0 min and t = 28 min) and two different angles (θ = 11 deg and θ = 36 deg) are plotted (colored lines) along with their corresponding fittings (grey lines). Electrical impedance spectroscopy analysis would provide an alternative way to confirm some of the observations extracted from the optical model.
From this analysis, it is clear that the change in the position of the generation zone entails a modification of the optical environment of the emitters, which yields different emission characteristics of the device. In the ESI† (Fig. S3), we show some numerical examples of how the emission of the LEC would change as a function of the generation zone position. In particular, we find a 1.36-fold emission enhancement if light is generated in the spectral region where the LDOS is higher. Our results, thus, open a path to engineer the layout of thin-film light-emitting devices aiming to maximize their performance.
Footnotes |
| † Electronic supplementary information (ESI) available: Optical constants of materials involved in the calculations, EL measurements of fabricated devices and numerical results. See DOI: 10.1039/c9cp05505c |
| ‡ Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany. |
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