This website uses cookies to give you the best user experience. If you continue without changing your settings we'll assume you are happy to receive all RSC cookies. You can change your cookie settings by navigating to our Privacy and Cookies page and following the instructions. These instructions are also obtainable from the privacy link at the bottom of any RSC page.
Lite Version|Standard version
Home > RSC Advances >
To gain access to this content please
Log in via your home Institution.
Log in with your member or subscriber username and password.
Download


Buy PDF Add PDF to Basket (£42.50*)
*Exclusive of taxes
This article contains 4 page(s)
Abstract | Cited by

Bottom-gate multi-channel ferroelectric-gate field effect transistors (FETs) based on ZnO nanofibers were fabricated, using Bi3.15Nd0.85Ti3O12 (BNT) thin film as the gate insulator and ZnO nanofibers as the semiconductor multi-channel. The electrical characteristics of the multi-channel ZnO nanofiber ferroelectric-gate FETs showed typical p-channel transistor properties with a low threshold voltage of −0.5 V, a high effective field effect mobility, and a large on/off current ratio of 104. These excellent performances are attributed to the multi-channel ZnO nanofiber and BNT ferroelectric-gate insulator.

Graphical abstract: Multi-channel ferroelectric-gate field effect transistors with excellent performance based on ZnO nanofibers

Page: ^ Top


Enter Keywords, author, title,reference, or DOI
Log in | Register