Muhammad Z. Iqbalab,
Marios S. Katsiotisa,
Saeed M. Alhassana,
Matthew W. Liberatoreb and
Ahmed A. Abdala*ac
aDepartment of Chemical Engineering, The Petroleum Institute, PO Box 2533, Abu Dhabi, United Arab Emirates. E-mail: aabdala@pi.ac.ae; Fax: +971 2 6075200; Tel: +971 2 607 5584
bDepartment of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO 80401, USA
cDepartment of Chemical Engineering and Petroleum Refining, Faculty of Petroleum and Mining Engineering, Suez University, Suez, Egypt
First published on 3rd January 2014
Uncatalyzed functionalization of thermally reduced graphene (TRG) with 3-aminopropyltriethoxy silane (APTS) is reported and the effect of the solvent on selective functionalization is discussed. The chemical, morphological and thermal properties of the functionalized TRG (f-TRG) have been studied using FTIR, XPS, EELS, Raman spectroscopy, TEM, and TGA. Our results indicate that the use of organic solvent during the silylation reaction not only increases grafting yield from 7 to 8 atomic% of Si attachment but also directs APTS groups to the edges of TRG as revealed using energy filtered TEM elemental mapping. A reaction mechanism based on attachment of the silane groups on the TRG surface through residual, surface bound phenolic and carbonyl groups is proposed and discussed. The present approach provides an economical route for mass production of APTS-f-TRG and sheds light on the role of organic solvents in silane functionalization of graphene.
The use of residual oxygen pendent groups on thermally or chemically reduced graphene for further attachment of the organic moieties is an attractive route exploited for covalent functionalization of graphene.15 Silane coupling agents are historically applied to surface modification of nanofillers.16–20 Graphene produced from reduction of graphite oxide contains sufficient amounts of hydroxyl, epoxy and carboxyl groups on their basal planes and edges.21 These groups can be dehydrated with silane coupling agents under appropriate conditions. Also, the functional groups of silane coupling agents can be chemically attached to the polymer. Amongst, 3-aminopropyltriethoxysilane (APTS) has been widely reported as a reactive coupling functionalization for CNTs17,22 and graphene.18,19,23 Specifically, Wang et al. reported attachment of APTS on graphene surface and used the functionalized graphene in graphene–epoxy nanocomposites.18 The grafting of APTS was proposed to follow dehydration of carboxylic and hydroxyl groups. In another report by Yang et al., APTS reaction with chemically converted graphene resulted in 4% Si grafting on atomic basis.19 However, the proposed mechanism of APTS grafting was through the epoxide groups on the graphene surface. In addition, both reports employed DCC catalyst to accelerate reaction kinetics and enhance the grafting yield. A 3.4 atomic% Si yield has also been reported for graphene by Ganguli et al.23 Gaspar et al. reported detailed reaction mechanism for grafting various types of silanes on CNT.22 Therefore, these studies outline the importance of silane functionalized graphene in various applications. For the mass production of APTS-f-graphene, a method that does not utilize a catalyst is needed. Catalyst can increase the production cost by many fold. Hence, a catalyst-free method in functionalizing graphene by silane based coupling agents is highly desirable. In addition, in order to use the APTS-f-graphene in different applications, a better understanding of APTS chemistry is needed. This study focuses on the above mentioned question using various characterization techniques.
In the present work, we present a catalyst-free method for APTS attachment on TRG with higher yield of silane grafting. Thermally reduced graphene (TRG) is produced via simultaneous thermal exfoliation and reduction of graphite oxide (GO). The effect of solvent on the localization of functionalization on graphene surface is also discussed. Two simple routes for reacting APTS with TRG are presented; (1) using toluene as a solvent, and (2) using pure silane in absence of solvent. A mechanism for APTS attachment onto graphene that reflects the effect of organic solvent on functionalization chemistry is proposed and supported by the results of various characterization tools. The resulting functionalized graphene was thoroughly characterized using physicochemical methods to understand the nature of functionalization reaction. The success of the simple reaction routes is expected to promote mass production of APTS-functionalized graphene.
To remove any physically adsorbed APTS from the surface of TRG, f-TRG was dispersed in toluene under stirring for 15–20 minutes followed by tip-sonication for additional 5 minutes and filtering under vacuum. To ensure the complete removal of any unreacted APTS, this washing procedure was repeated twice. The samples were then dried in air at 120 °C for 2 h.
The APTS-functionalized TRG was systematically characterized to investigate the effect of the solvent on the chemical, thermal, electrical and morphological properties of APTS-f-graphene. The chemical nature of the f-TRG is studied by FTIR, XPS, Raman, and electron energy loss (EEL) spectroscopy to elucidate the mechanism of APTS grafting on TRG. TEM micro-images and elemental mapping were used to study the morphology of f-TRG. The electrical conductivity and thermal stability of f-TRG are also discussed.
While FTIR confirmed the attachment of APTS to graphene, a quantitative estimate of the level of functionalization is provided by XPS analysis. The results shown in Table 1 reveal that the functionalized graphene samples contain 7.4% Si and 6.9% N for f-TRGP and 8.0% Si and 6.5% N for f-TRGS. Not only we are able to achieve such high yield without the use of any catalyst but also the observed yield is higher than all previously reported for nanocarbons, e.g., graphene oxide19 and CNT.22 The Si/N ratio for f-TRGP is close to the stoichiometric APTS ratio of 1. However, The Si/N ratio for f-TRGS is 1.2. A Si/N atomic ratio greater than unity suggests the session of the amino branch from APTS induced possibly by solvent induced radical transfer to carbon atoms in the amino branch of APTS, which was also suggested by the FTIR analysis.
Atomic% | ||||
---|---|---|---|---|
C | O1s | N1s | Si2p | |
TRG | 89.1 | 10.9 | — | — |
f-TRGP | 66.8 | 20.0 | 6.9 | 7.4 |
f-TRGS | 67.4 | 18.2 | 6.4 | 8.0 |
In order to further explore the structure of f-TRG, high resolution C1s, O1s, N1s and Si2p spectra were collected (Fig. 2 and Table 2). In C1s spectra, all the samples exhibit the same graphitic CC peak whose area percentage decreases in the f-TRG due to the appearance of new bands. The C–O peak19 in TRG decreased in f-TRGP and f-TRGS samples. Due to the smaller electronegativity difference between C and N compared to between C and O, the peak for C–N is observed at a lower binding energy (BE). The relative percentage of ∼285 eV peak has increased significantly in f-TRGP and f-TRGS. The peak for C
O carboxylic groups for f-TRGS has a reduced intensity compared to the C
O peak in TRG, it vanishes in f-TRGP. Thus, C
O is a potential attachment site for APTS on TRG (i.e., the carboxylic group on TRG). The disappearance of C
O in f-TRGP suggests selective attachment of APTS onto the carboxyl group. Meanwhile, two additional peaks are observed in C1s spectra of f-TRGP. The first peak at 286.16 eV is assigned to aliphatic C–N group19,28 whereas the second peak at 288.85 eV is attributed to either N–C
O or O–C
O.22 Since APTS is a bi-functional silane, its grafting to TRG can also take place through a linkage between the amine group in APTS and the carbonyl or carboxylic functionalities on TRG. The small peak at 288.85 eV BE is attributed to such linkage.22 However, the relative area of this peak is very small indicating that fraction of APTS that attaches to TRG through the amine linkage, is relatively small. Therefore, we conclude that APTS reacts bi-functionally with TRG through attacking the phenolic and carbonyl groups on the surface. Moreover, the π–π* interactions18 are observed in TRG and f-TRGS whereas no π–π* interactions are observed in f-TRGP possibly due to the disappearance of C
O peak in f-TRGP.
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Fig. 2 High resolution XPS spectra of pure and f-TRG samples. Y-axis scale for all C1s spectra is the same and Y-axis scale for all O1s spectra is the same. |
C1s | O1s | |||||||||
---|---|---|---|---|---|---|---|---|---|---|
C![]() |
C–O/C–N | C–N | C![]() |
N–C![]() ![]() |
π–π* | C![]() |
Si–O | C–O–C/O–C![]() |
O–C![]() |
|
TRG | 284.57 | 285.86 | — | 287.26 | — | 290.54 | 531.56 | — | 533.55 | 534.84 |
f-TRGP | 284.57 | 285.37 | 286.16 | — | 288.85 | 531.26 | 532.75 | — | — | |
f-TRGS | 284.67 | 285.67 | — | 287.26 | — | 290.14 | 531.66 | 532.65 | 533.74 | — |
Unlike C1s core level, where the assignment of the peaks to single and multiple C–O bonds is quite straight forward, the assignment of O1s peaks is more difficult. The carbonyl groups CO are expected between 531 and 532 eV, C–O bonds in ethers and hydroxyls between 532 and 533.5 eV, whereas ether oxygen atoms in esters and anhydrides appear at 533.8–534.6 eV, or higher, and the carboxilates should originate from a single component at BE similar to that of C
O groups in the case of oxidized carbon surfaces. Although C
O is observed for TRG, f-TRGP and f-TRGS, the relative intensity of C
O is lower in the f-TRG samples as a result of APTS attachment in agreement with the analysis of the C1s spectra. The C–O–C/O–C
O band in TRG appears at higher BE for TRGS showing the bonding with a more electronegative structure at this point. The peak at ∼533.5 eV originates from Oδ− contribution of TRG due to the presence of O−2 ions.
The appearance of new Si–O bands in f-TRGP and f-TRGS is a sign of successful APTS functionalization and its intensity and relative contribution depend on the degree of APTS functionalization.29 Moreover, the carboxylic band observed for TRG at ∼534 eV disappears in the f-TRG samples in excellent agreement with the results from C1s XPS spectra and FTIR.
The prominent changes in O1s spectra of the pure and functionalized samples clearly indicate that the silanization has changed the structure of the graphene sheets. Table 2 summarizes the results of the high resolution C1s and O1s spectra. Furthermore, the details of high resolution N1s and Si2p XPS spectra of f-TRG are provided in the ESI.†
Considering the XPS data and the structure of f-TRG, the APTS may attach to graphene through the phenolic as well as the carbonyl surface groups where a similar mechanism has been reported by Gaspar et al.22 for CNTs. However, this multiple functionality may differ from the previously reported mechanisms for silylation where the aminosilanes are proposed to attack the epoxy groups19 on the graphene surface. In addition, the second possibility of enhanced grafting efficiency of APTS is NH2–silicon polymerization22 on the surface of TRG.
Previous reports demonstrated APTS grafting efficiency on MWCNT22 up to 4.5 Si atomic%, and 3.4% (ref. 23) and 4.1% for graphene.19 The current method is able to generate much higher yield of ∼7.4% Si attachment in f-TRGP and ∼8% Si in f-TRGS. The increase in Si attachment can be attributed to the reaction of APTS with not only the surface functionalities of graphene but also with the surface C-atoms. Schematics of possible mechanisms are also discussed later.
The effect of silane attachment on the electronic structure of graphene is also confirmed by EELS. The core-level energy losses of C, O, N and Si (Fig. 3 and 4) are measured at the areas of minimum overlapping between the graphene sheets. All collected EELS spectra are background corrected.
The carbon K-edge (Fig. 3a) is the characteristic of graphene.30 The sp2 hybridization of TRG is clearly observed as sharp peaks corresponding to the 1s ≅ → π* and 1s → σ* transitions at 289 and 294 eV, respectively. Interestingly, the hybridization state of graphene is altered in the functionalized samples. In specific, the sp2 structure becomes less dominant in the case of f-TRGP and f-TRGS in excellent agreements with FTIR, XPS and Raman results. The ratio sp2/(sp2 + sp3) was calculated using the peak-ratio method31 and found to be 98 ± 1.5%, 94 ± 1.1%, and 87 ± 1.9% for TRG, TRGP, and TRGS, respectively. A plausible explanation for this change in hybridization is attributed to the sp3 structure of carbon atoms in silane. Based on the current information obtained from FTIR and XPS on the successful grafting of APTS on graphene, the apparent change in hybridization most possibly represents the combination between the sp2 structure of graphene and the sp3 structure of silane. The oxygen K-edge region is presented in Fig. 3b and exhibits an overall shape equivalent to that of the N K-edge. Two π* peaks can be observed at 530 and 535 eV which are attributed to the C–O bonds. The dominating structure however, is the absorption beyond 541 eV with a particular triangular shape. Similar findings were observed in literature32,33 and the aforementioned structure was attributed to the increased presence of Si–O bonds originating from the APTS-attachment on graphene.
Fig. 4a displays the nitrogen K-edge evolution, where a strong π* absorption is observed at ∼399 eV and a structure-less σ* absorption of triangular shape is observed at ∼410 eV.
The π*-transition is usually attributed to unsaturated C–N bonds.34 Since this type of bonds is not present in the silane molecule, the peak at ∼399 eV can be attributed to a possible loose attachment of the amine part of silane on the graphene surface in agreement with FTIR and XPS spectra. Regarding the σ* absorption, this can be attributed in the Si–N bond present in APTS. In the case of silicon L-edge (Fig. 4b), the EELS spectra from the functionalized samples are very similar to the spectrum of silicon oxide.35 Peak at 99 eV corresponds to elemental silicon (Si), at 105 eV to Si–N bond (Si1+) and peaks at 108 and 116 eV to Si–O (Si2+) and SiO (Si4+) bonds respectively.36,37 Regarding Si L1 edge at ∼155 eV, strong overlapping with the threefold L2–3 edge prevents the acquisition of any useful information. Regardless, silicon EELS strongly supports the presence of silane grafted on graphene.
The effect of APTS functionalization and the degree of exfoliation in TRG was also examined by the Raman spectroscopy (Fig. 5), which is known for its unambiguous nondestructive identification.38 For graphitic materials, the typical Raman bands are: a defect-induced D band at 1350 cm−1, an in-plane vibration of sp2 carbon at 1580 cm−1 (G band), and a two-phonon double-resonance process at ca. 2700 cm−1 (2D band). The G-band position increases with decreasing number of layers in graphene.39 Herein, the G band centred at 1770 cm−1 for TRG has been upshifted to 1778 cm−1 on functionalization (Fig. 5a), thus revealing the decrease in the layer stacking,40 mainly due to the presence of APTS. Moreover, compared to TRG (Fig. 5b), the characteristic 2D band for f-TRGS and f-TRGP is observed to be blue shifted by about 28 cm−1 and accompanied with peak broadening, confirming that the functionalization lead to better exfoliation of TRG and formation of few-layer graphene flakes.41
Additionally, the appearance of D peak at 1339 cm−1 has been attributed to the presence of structural disorder.42 The D band arises from the activation in the first order scattering process of sp3 carbons in graphene, and the intensity ratio of D and G bands (ID/IG) expresses the sp2/sp3 carbon ratio, a measure of the extent of disorder.43 The ID/IG for f-TRGS and f-TRGP has increased from 0.677 for TRG to 0.903 and 1.026, respectively. The increased ID/IG ratio is consistent with the functionalization of graphene through covalent bonding44,45 and also in agreement with the EELS results. In addition, the appearance of a new peak at lower frequencies between 500 and 600 cm−1 is ascribed to the Si grafting on TRG.46 Hence, overall the Raman findings confirm the successful functionalization of TRG and the exfoliation state of TRG remains unaffected by APTS attachment.
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Fig. 6 TEM images of (a) pure TRG particle composed of overlapping graphene sheets (inset: SAED pattern from the center of the graphene particle), (b) HRTEM image of two overlapping graphene sheets. |
The high resolution TEM imaging (HRTEM) performed in areas where graphene was “folded”, showed the presence of multi-layer structure with number of layers between 5 and 10. It worth noting that TEM does not provide any statistically significant estimate of the thickness or number of layer of graphene but is used here as a to provide a qualitative comparison between TRG and f-TRG. Finally, EDS results indicate the presence of a small amount of chlorine impurity (<0.5%), probably originating from the HCl washing (see ESI†).
Although f-TRGP exhibits a structure similar to that of pure TRG, however, the sheets do not appear as well separated as were in the pure TRG (Fig. 7). The silane creates defects in the graphene sheets (tears on the graphene surface) (see Fig. 7a for f-TRGP). On the other hand, no considerable change in the morphology of graphene sheets was observed for f-TRGS. Instead, the sheets are very well defined and separated, (Fig. 7b). The solvent appears to soften the severe attack of APTS on graphene and hinders breaking down of sheets to smaller ones. We infer that using organic solvent during the course of silane functionalization reaction helps in maintaining the intrinsic morphology of graphene. The EDS analyses (see ESI, Table s2†) from the two samples were in good agreement with the XPS elemental analysis: on average Si/N ratio is found to be equal to 1.05 for f-TRGP, and 1.25 for f-TRGS (average of EDS spectra collected at various points for each sample).
Furthermore, in order to understand the preferable attachment sites for silane on TRG, EFTEM elemental mapping was performed on both f-TRGP and f-TRGS. To the best of our knowledge, there is currently no publication on EFTEM mapping of the functionalized graphene to determine the functionalization selectivity. However, the EFTEM elemental mapping, completed here (Fig. 8), can be a simple and versatile method for studying the local functionalization. Bright spots in Fig. 8b and d represent Si from EFTEM Si-elemental mapping of Fig. 8a and c. It is interesting to note that, in f-TRGP, Si (and N which is not shown here) is distributed over the entire graphene surface (Fig. 8b) representing a homogeneous distribution of the grafted silane on f-TRGP surface. Thus, we infer that pure silane reacted homogeneously on the graphene surface. A small amount of localized Si is also observed on the sheet edge. Thus, the mode of silane grafting, when TRG is reacted with pure APTS, is with the surface functional groups as well as the functional groups on the sheet edges. On the other hand, in f-TRGS, the Si is observed to localize on the sheet edges. The homogeneous surface distribution of Si was not observed as was seen in f-TRGP. Thus, it appears that in the presence of organic solvents like toluene, the edge-functionalization of TRG can be the preferable mode of grafting. The selectivity of edge-functionalization might further be increased by choosing appropriate solvents and reaction conditions. In summary, solvent can play a vital role in the selective functionalization of TRG. Further studies will evolve better control on its chemistry for selective applications of silane functionalized TRG.
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Fig. 8 TEM bright field image (a) and corresponding EFTEM maps of silicon (b) for f-TRGP; TEM bright field image (c) and corresponding EFTEM maps of silicon (d) for f-TRGS. |
Based on the observations presented above, proposed reaction schemes for APTS with TRG are elucidated (Scheme 1). The TRG oxy-functionalities are distributed over the surface and sides of the sheets where the carboxylic groups are mainly located near the edges and most of hydroxyl and epoxy groups are distributed over the surface. In f-TRGP, APTS reacts with most of the surface groups and there is less reaction with the side carboxylic groups.
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Scheme 1 Reaction of APTS with TRG. TRG contains carboxylic functionalities on the sides whereas hydroxyl and epoxy groups are mainly distributed over the surface. |
In the case of f-TRGS, the APTS molecules form covalent bonds with the carboxylic groups present on the sides of TRG sheets.
The use of various solvents assisting silane functionalization is not uncommon. Toluene being a non-polar solvent with a dipole moment of 0.36 D has induced significant effects on the functionalization selectivity. Owing to the non-polarity of toluene and TRG being polar due to the presence of oxy-functional groups on its surface, the solvent helps assisting preferable distribution of silane on TRG surface; leading silane molecules to more reactive areas such as the edges. On the other hand, in the absence of solvent, the silane (being polar) is chemically adsorbed throughout the surface and edges. Increasing solvent polarity in silylation reaction been reported to decrease the rate of silylation of inorganic surfaces.47,48 Thus, using non-polar solvents such as cyclohexane, benzene, diethyl ether, chloroform, etc. can lead to interesting aspects for selective silane functionalization. Nevertheless, the probability and further quantification of the attached functional groups depending on other solvents is beyond the scope of this article.
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Fig. 9 Thermograms of TRG, f-TRGP, and f-TRGS. Samples were heated from 50–500 °C at 10° min−1 under nitrogen. |
As discussed in the previous section, the XPS results indicated that f-TRGP contains 7.4 atomic% Si, which corresponds to 15 wt% APTS and f-TRGS contains 8 atomic% Si corresponding to 16 weight% APTS.
Therefore, about 40% of APTS in f-TRGP and 55% of APTS in f-TRGS is lost between 50 and 500 °C, respectively. Moreover, the higher weight loss for f-TRGS compared to f-TRGP might be due to the most of the attached silane groups on the edges (as observed from the elemental mapping), and in f-TRGP, the silane moieties are distributed over the surface and on the edges of the sheets. Thus, it can be inferred that the end-functional groups are thermally less stable as compared to the surface distributed labile groups.
The electrical resistance of pure and functionalized TRG samples has been investigated using a custom made conductivity setup. The functionalization, as expected, has appeared to increase the resistance of graphene. The measured room temperature resistance of TRG of 42 ohms slightly increases to 50.8 ohms for f-TRGP but increased significantly to 230 ohms for f-TRGS. The increased resistance (decrease in conductivity) is expected due to the increase in sp3-contents in the f-TRGS as indicated by ID/IG ratio in the Raman spectra (see Fig. 5). The edge distributed APTS in f-TRGS seems to have a more pronounced effect on the conductivity compared to surface distributed groups in f-TRGP. This may be due to the effect of the group distribution on the dispersion of sp2-electronic cloud of TRG.
The quantification of the f-TRG showed more than 7–8 atomic % attachment of Si, which is higher than any previously reported functionalization. The method of APTS intercalation/incorporation has a significant effect on the structure and properties of the resulting functional material. Based on the EFTEM elemental mapping, it can be proposed that the selective end-functionalization can be achieved using a suitable solvent during the course of the silylation reaction. The f-TRG has shown good thermal stability over the temperature range of 50–500 °C where only 16% weight loss is observed for pure TRG compared to 22% for TRGp and ∼25% for TRGs. The decrease in electrical conductivity (increase in electrical resistance) of TRG with functionalization has been attributed to the increase in sp3-contents. Further studies can evolve a better mechanism for selective functionalization of TRG with APTS.
Footnote |
† Electronic supplementary information (ESI) available: Experimental details, XRD, TEM of TRG and EDS results are included. See DOI: 10.1039/c3ra46586a |
This journal is © The Royal Society of Chemistry 2014 |