Xiao
Chen
a,
Jianhui
Jin
a,
Guangyan
Sha
a,
Chuang
Li
a,
Bingsen
Zhang
b,
Dangsheng
Su
b,
Christopher T.
Williams
*c and
Changhai
Liang
*a
aLaboratory of Advanced Materials and Catalytic Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, China. E-mail: changhai@dlut.edu.cn; Web: http://finechem.dlut.edu.cn/liangchanghai Fax: +86 411 84986353
bShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
cDepartment of Chemical Engineering, Swearingen Engineering Center, University of South Carolina, SC 29208, USA. E-mail: willia84@cec.sc.edu; Web: http://www.che.sc.edu/faculty/williams Fax: +1 803 777 8265
First published on 8th November 2013
Silicon–nickel intermetallic compounds (IMCs) supported on silica (Si–Ni/SiO2), as a highly efficient catalyst for CO methanation, have been prepared by direct silicification of Ni/SiO2 with silane at relatively low temperature in a fluidized bed reactor. The as-prepared materials were characterized by X-ray diffraction, transmission electron microscopy, in situ FT-IR of CO adsorption, and H2-temperature programmed reduction-mass spectrometry (TPR-MS) of CO. The results indicate that uniform NiSix nanoparticles with about 3–4 nm are evenly dispersed on silica. The combined in situ FTIR and TPR-MS results suggest that the Si–Ni/SiO2 catalysts afforded high activity in CO methanation, promoting the formation of CH4 at ca. 240 °C. The catalytic hydrogenation of CO on Si–Ni/SiO2 was investigated in a fixed-bed reactor at GHSVs 48000 mL h−1 g−1 under 1 atm in the temperature interval 200–600 °C. In the higher temperature reaction region (500–600 °C), it is notable that the Si–Ni/SiO2 catalysts present high activity for CO methanation as compared to the Ni/SiO2 catalyst. More importantly, the Si–Ni/SiO2-350 catalyst containing thermally stabile Si–Ni IMCs shows significantly higher resistance to the sintering of Ni particles. Raman characterization of the spent materials qualitatively shows that carbon deposition observed on the conventional Ni/SiO2 catalyst is much higher than that of the used Si–Ni/SiO2-350. It is proposed that small amounts of silicon interacting with Ni atoms selectively prevent the adsorption of resilient carbon species.
The group VIII metals Ru, Fe, Co, and Ni have been employed as the major active components for CO methanation catalysts to date, but there are many existing problems. Ru is known to be a highly efficient catalyst for the removal of carbon oxides from inlet streams in hydrogen or ammonia plants.11 However, the active sites are easily lost in high concentration CO due to the formation of sublimed Ru(CO)x during the reaction.12 Iron is usually much less active and more prone to carbon deposition.13 Co-based catalysts have good stability but they afford poor selectivity to methane.14 Ni-based catalysts are widely applied in methanation reaction because of their initially high activity. However, they are less resistant to deactivation due to coke and/or sulfur on the metallic Ni surface, high-temperature sintering, and the easy removal of Ni from the support as volatile Ni(CO)4 under reaction conditions.9,15 Therefore, the research and development of novel highly efficient catalysts for CO methanation is of significant interest in the chemical industry.
Due to the dissolution of silicon atoms into metal lattices, transition metal silicides have specific crystal and electronic structures different from that of the corresponding metal, leading to unique physical and chemical properties. These include good electrical conductivity, high chemical inertness, thermal stability, and superior resistance to H2S poisoning.16,17 These properties suggest that such materials may be particularly rugged enough for the harsh environment of CO methanation. However, in past research, transition metal silicides were mainly applied as catalysts in hydrogenation reactions for tuning the selectivity towards target products through the formation of silicon–metal intermetallic compounds.18–22 Nevertheless, there has been a literature report dealing with the effective use of intermetallic compounds of the formula MNi5 as methanation catalysts.23 Thus, it is interesting to explore the stability and catalytic activity of metal silicides for CO methanation.
In this work, we report the preparation and characterization of various Si–Ni intermetallic compounds (IMCs) supported on silica, and their evaluation as catalysts for CO methanation. The results demonstrate that Si–Ni/SiO2 possesses efficient catalytic activity and high-temperature stability compared with conventionally reduced Ni catalyst. More importantly, silicon promotion was found to prevent the adsorption of residual carbon species, without affecting the initial activity or selectivity.
X-Ray diffraction (XRD) patterns were recorded on a Rigaku D/Max-RB diffractometer with a Cu Kα monochromatized radiation source, operated at 40 kV and 100 mA. Diffraction data were collected between 5° and 90° (2θ) with a resolution of 0.02°. The average size of Si–Ni IMC particles was evaluated by the Scherrer formula as follows:
(1) |
Transmission electron microscopy (TEM) was performed using a Philips CM200 FEG transmission electron microscope (accelerating voltage 200 kV) with high-resolution imaging. Powder samples were ultrasonicated in ethanol and dispersed on copper grids covered with a holey carbon film.
In situ FTIR spectra were recorded using a Nicolet Nexus 470 spectrometer equipped with mercury–cadmium–telluride B (MCT-B) detector cooled by liquid nitrogen. FTIR spectra were collected in single beam absorbance mode with a resolution of 4 cm−1. Before characterization, the sample (about 0.02 g) was compressed into a self-supporting disc. The sample was reduced in H2 (100 sccm) for 2 h at 400 °C, and then cooled down to 25 °C in He, at which point a background spectrum was acquired. The sample was then exposed to 1% CO in He (100 sccm). After 30 min, the flow cell was purged with pure He to remove any physisorbed and gas-phase CO. The spectra of CO chemisorption on the sample were taken, while the He gas was switched to H2 (100 sccm) and the temperature increased from RT to 400 °C with a ramp of 5 °C min−1. To distinguish between desorption and methanation of CO with increasing temperature, the temperature-programmed desorption FTIR (TPD-FTIR) in He was also carried out.
In the H2-temperature programmed reduction-mass spectrometry (TPR-MS) of CO, the sample was reduced at 400 °C in 10% H2–He for 3 h, and then cooled down in He. CO was introduced into the reactor to adsorb on the surface of the catalyst at 25 °C and 1 × 10−6 Torr. The gas phase CO was removed by flowing He through the reactor. H2-temperature programmed reduction was performed at 100 sccm flow (10% H2 in He) at a ramp rate of 10 °C min−1 from 25 to 400 °C. The gaseous effluent from the reactor was monitored by a mass spectrometer.
Raman spectra were recorded on a Thermo DXR Raman microscope at room temperature using a 532 nm laser excitation line and constant power of 10 mW. The resolution of all measured spectra was 4 cm−1. The average spectral resolution in the Raman shift range of 50–3000 cm−1 was 5 cm−1 (grating 900 lines per mm).
(2) |
(3) |
Sample | IMC phases | S BET (m2 g−1) | Average pore size (nm) | Pore volume (cm3 g−1) | H2 uptake (μmol g−1) | Particle size (nm) |
---|---|---|---|---|---|---|
NiO/SiO2 | — | 227 | 3.8 | 0.40 | 76.4 | 2 |
Si–Ni/SiO2–250 | Ni2Si, NiSi | 182 | 3.9 | 0.37 | 76.7 | 2 |
Si–Ni/SiO2–350 | Ni2Si, NiSi, NiSi2 | 181 | 3.9 | 0.35 | 76.7 | 3 |
Si–Ni/SiO2–450 | NiSi, NiSi2 | 125 | 3.9 | 0.26 | 88.4 | 3 |
XRD patterns of the Si–Ni/SiO2-Ts samples with 20% loadings prepared at different silicification temperatures and Si–Ni/SiO2-450 with different loadings are shown in Fig. 2. A broad SiO2 diffraction peak at about 23.4° can be detected. As shown in Fig. 2a, while the peak at ca. 45° is due to Ni, diffraction peaks due to Si–Ni IMCs are not detected. This suggests the formation Si–Ni IMCs highly dispersed on SiO2 with low crystallinity. The estimated average sizes of the particles are ca. 3 nm (as summarized in Table 1). XRD patterns of the Si–Ni/SiO2-450 with higher loadings are further conducive to identifying the phase of Si–Ni/SiO2 catalysts (as shown in Fig. 2b). The crystalline phase was identified by comparison with the JCPDS file (NiSi2, cubic, no 43-0989). Upon increasing the loadings from 20% to 40%, four new diffraction peaks at 28.60, 47.41, 56.33, and 76.59° are observed, which can be attributed to the NiSi2 lattice planes (111), (220), (311), and (331) respectively. In addition, the Ni3Si2O5(OH)4 phase can be observed in the Ni/SiO2 sample, which can be attributed to the in situ reaction between SiO2 and Ni2+ salt during the precipitation as follows:25,26 2SiO2 + 3Ni2+ + 5H2O = Ni3Si2O5(OH)4 + 6H+. XRD results show that this phase is very stable during thermal calcination in air at 400 °C and reduction in H2 at 350 °C. Only some of Ni3Si2O5(OH)4 was reduced to metallic Ni phase (Fig. S1†). The peaks due to Ni3Si2O5(OH)4 at 35° and 62° vanished with the increasing silicification temperature, possibly due to the following chemical reaction: Ni3Si2O5(OH)4 + SiH4 → NiSix + SiO2 + H2O.
Fig. 2 X-ray diffraction patterns of (a) Si–Ni/SiO2-Ts sample with 20% loadings prepared at different silicification temperature and (b) Si–Ni/SiO2-450 with different loadings. |
In addition, based on our previous research about the synthesis of bulk nickel silicides,19,27 the initially formed Ni2Si is further transformed through Si-enrichment into phases like NiSi or NiSi2 with the increase in silicification temperature from 250 to 450 °C. Therefore, we can deduce the IMC phases of Si–Ni/SiO2 catalysts prepared at different silicification temperature (as presented in Table 1).
The crystalline nature and particle size of the Si–Ni/SiO2-350 sample were confirmed by TEM measurements. The TEM images in Fig. 3 show that uniform Si–Ni IMC nanoparticles with about 3–4 nm size are evenly dispersed on the silica. The high-resolution TEM image in Fig. 3 further confirms the formation of nickel silicide with 3 nm size, i.e., the lattice spacing of 0.200 nm corresponds to that of (121) planes of Ni2Si and the lattice spacing of 0.205 nm corresponds to that of (210) planes of NiSi.28,29 The EDX spectra shown in Fig. 4 further confirm the existence of Si and Ni elements in the samples. The Cu signals arise from the copper TEM grid and the peak of carbon is caused by contamination from irradiation of the electron beam. The typical STEM dark field image and corresponding elemental maps of the Si–Ni/SiO2-350 catalyst (Fig. 5) clearly show that Ni, Si, and O elements are well distributed in the sample, which may be demonstrated the existence of Si–Ni IMCs.
Fig. 5 Representative STEM dark-field images and corresponding X-ray maps of O, Ni, and Si for Si–Ni/SiO2-350 sample. |
For the Si–Ni/SiO2 samples, the intensity of absorbed CO significantly increased with the increasing silicification temperature from 250 °C to 450 °C, especially the CO molecules absorbed on two or more Ni atoms at 1930 and 1760 cm−1. This is attributed to the modification of the Ni electronic states by the covalent bonding in Si–Ni IMCs.34 The stronger interaction of Si and Ni may promote the complex adsorption of CO, both through its C atom on reduced nickel and through its oxygen atom on the silicon species.35 In addition, the shift of the band around 1760 cm−1 to lower wavenumbers with the increasing temperature indicates that the active sites of Si–Ni are isolated.36
In order to investigate the reaction process on the catalyst surface under reaction conditions, temperature-programmed reaction FTIR (TPR-FTIR) in H2 and temperature-programmed desorption FTIR (TPD-FTIR) in He were used to characterize the Si–Ni/SiO2-350 sample (as shown in Fig. 7). The bonds of CO absorbed on the Si–Ni/SiO2-350 catalyst significantly changed during the heating. As shown in Fig. 7a, the linearly adsorbed CO band at 2060 cm−1 possesses the strongest absorbance initially, before weakening and slightly red shifting after the H2 introduction, and further decreasing with increasing temperature. However, as shown in Fig. 7b, increasing the temperature in He results in a significant decrease in the intensity of the higher frequency side of the broad band in the 2000–2060 cm−1 region. This is similar with FTIR studies of CO adsorption on Ru/SiO2 catalysts.37 The removal of linearly adsorbed CO is essentially the same for CO reaction with H2 and desorption in He. However, the intensity of absorbed bridged CO band at 1930 and 1760 cm−1 was decreased at around 200–260 °C in H2 but was unchanged in He.
These various changes of the IR bands reveal a strong modification of the Ni surface (i.e., reconstruction) during the CO adsorption and disproportionation.36 The presence of hydrogen during the measurement decreases slightly the coverages of the bridged CO species at high temperatures due to either a decrease in the heat of adsorption or the perturbation of the adsorption equilibrium by hydrogenation of the adsorbed CO species.38 All of the peaks of absorbed CO almost vanished at the reaction temperature of about 240 °C, which provides considerable evidence that CO hydrogenation is completed during the TPR. Thus, the following possible mechanism is indicated: 1) the gas phase CO initially absorbed on the surface of nickel silicide as linear-and bridge-type species; 2) the bridge-type CO was easily dissociated to Cs (adsorbed carbon) and CO2 on the surface of nickel silicide; and 3) the linear adsorbed CO and the Cs were then quickly reacted with dissociated hydrogen (Hs) to form the CH4.38,39
Fig. 8 (a) Products response distribution from TPR-MS profile as a function of temperature; (b) CH4 response distribution from TPR-MS profile for Ni/SiO2 and the series of Si–Ni/SiO2 catalysts. |
In the highest temperature reaction region (500–600 °C), it is notable that the Si–Ni/SiO2 catalysts present high activity for CO methanation. Although the thermodynamic equilibrium value for CO conversion and CH4 selectivity decreased at high temperature (shown as short dashed lines in Fig. 9), CO conversions for the series of Si–Ni/SiO2 catalysts are stable over 70%. In addition, the selectivities toward CH4 for the series of Si–Ni/SiO2 catalysts silicified at 250, 350, and 450 °C were ca. 48%, 60%, and 37%, respectively, exhibiting excellent stability. However, the CO conversion and the CH4 selectivity for the Ni/SiO2 catalyst at 600 °C is 28% and 30%, which represents a significant drop. The Ni particles were sintered at high methanation temperature and carbon was deposited on the Ni/SiO2 catalyst during the reaction, leading to catalyst deactivation.9,14 However, due to the modified electronic structure and the geometrical site isolation at the surface of Si–Ni IMCs, these catalysts exhibited dramatically improved resistance to sintering and carbon deposition, increasing the thermal stability.42,43
Fig. 10 CO methanation properties on Si–Ni/SiO2-350 catalyst changing with time (the first step at 450 °C for 1500 min and the second step at 550 °C for 500 min). |
To further probe the stability, additional tests of Si–Ni/SiO2-350 and Ni/SiO2 catalysts at 600 °C were conducted, with results summarized in Fig. 11. Before the test, the catalysts were activated at 600 °C for 2 h. As shown in Fig. 11a, CO conversion for Ni/SiO2 was stabilized at ca. 82% during the initial 1000 min, with an increase to 100% with the prolonging of the reaction time to 2000 min. For the Si–Ni/SiO2-350 catalyst, the CO conversion was stabilized at ca. 80% during the 2500 min. It is worth noting that the pressure of the catalyst bed for the Ni/SiO2 catalyst increased to 0.2 MPa with the longer reaction time of 2000 min, while that for the Si–Ni/SiO2-350 catalyst was unchanged (i.e., was stable at 1 atm). This indicated that a large amount of carbon was formed on Ni/SiO2, which is in agreement with thermodynamics for the coke formation due to the Boudouard reaction and methane cracking when the reaction temperature exceeds ca. 600 °C.6,45 This is consistent with Nørskov et al., who observed that carbon nanofibers developed initially at step edges on nickel surfaces.46 After the silicification reaction, the formation of Si–Ni IMCs selectively blocked and stabilized the active sites of Ni particles, improving the resistance to coking in the high-temperature catalytic reaction.47
Fig. 11 Stability of Si–Ni/SiO2-350 and Ni/SiO2 catalyst for CO methanation (600 °C, 1 atm, GHSVs 48000 mL h−1 g−1). (a) CO conversion (b) CH4 selectivity. |
With respect to the CH4 selectivity (as shown in Fig. 11b), the CH4 selectivity of Ni/SiO2 catalyst decreased dramatically from 100% to 31% with increasing time on stream. However, the CH4 selectivity of Si–Ni/SiO2-350 catalyst decreased from 93% to 60% during the in initial 1000 min, and then showed no obvious change. The decreases are likely due to the methane cracking reaction, leading to carbon formation.6,45 On the basis of the results from Fig. 10 and 11, Si–Ni IMCs supported on silica have enhanced high temperature stability in CO methanation compared to reduced Ni/SiO2 catalysts.
Raman spectroscopy is a very sensitive method to study coke.48,49 In Fig. 12b, Raman spectra of Si–Ni/SiO2-350 and Ni/SiO2 catalysts after the stability test at high temperature are shown. The G band at ca. 1590 cm−1 and the D band at ca. 1340 cm−1 resemble closely those of pregraphitic carbons, confirming the formation of carbon species on the catalysts during the high temperature CO methanation.50 However, the spectral intensity from coke on the used Ni/SiO2 catalyst is much higher than that of the used Si–Ni/SiO2-350. Ni atoms are scattered and spatially isolated by silicon, which is similar to Ga modified Pd-based IMC surfaces.36,51,52 This in turn prevents the sintering of Ni particles and resists carbon deposition. In our work, the feed gas (H2/CO = 3/1) is rich in carbon content, thus carbon deposition is favored.53 Ni-based catalysts have been widely used in growing carbon materials by chemical vapor deposition. The growth mechanisms are found to be assisted by a dynamic formation and restructuring of mono-atomic step edges at the nickel surface.46,54 However, the formation of Si–Ni IMCs leads to the variation of geometric configuration and electronic structure of nickel due to the strong interaction between silicon and nickel atoms,20,47 affording higher resistance to carbon deposition.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c3cy00743j |
This journal is © The Royal Society of Chemistry 2014 |