Meng-Yu
Chen
and
Yung-Jung
Hsu
*
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, Republic of China. E-mail: yhsu@cc.nctu.edu.tw; Fax: +886 5724727; Tel: +886 5712121 ext. 55317
First published on 5th November 2012
A novel one-step cation exchange approach has been developed to prepare ZnO-decorated ZnSe nanorods (ZnSe–ZnO NRs), a prototype type-II semiconductor nanoheterostructure. Because of the staggered band offset which promoted effective charge separation, the as-synthesized ZnSe–ZnO NRs exhibited remarkable photocatalytic activities under visible light illumination, demonstrating their promising potentials in relevant photoconversion applications.
Owing to the inherently high degree of complexity, nanoheterostructures have exhibited superior synergistic properties which are difficult to acquire from their individual constituents. Particularly, great progress has been made in creating type-II semiconductor nanoheterostructures where the relative band alignment of the constituents may promote effective charge separation to favor diverse photoconversion applications.7 For instance, ZnO nanowires showed 17-fold increase in photocurrent generation once they were coated with a thin layer of ZnS. This increase is due to the more negative conduction band potential of ZnS, which ensures a quick electron transfer from ZnS to ZnO and thus the successful collection of electrons.7c Besides, upon the decoration of Ag2O nanoparticles, TiO2 nanobelts displayed significantly enhanced photocatalytic activities under both UV and visible light illumination. This enhancement derives from the staggered band offset between Ag2O and TiO2, which inhibits charge recombination to capture more charge carriers for photocatalysis utilization.7d Until now, miscellaneous kinds of semiconductor nanoheterostructures with type-II band offset have been proposed and fabricated to further the advancement of photoconversion technology.
In this work, we reported a novel one-step cation exchange method for preparation of ZnO-decorated ZnSe nanorods (denoted as ZnSe–ZnO NRs), a model system of type-II semiconductor nanoheterostructures. In the typical procedure, ZnSe NRs were obtained by conducting cation exchange reaction on Ag2Se NRs with excess Zn2+ ions in the presence of tributylphosphine at 50 °C. With extra feeding of a trace amount of H2O in the cation exchange reaction, conversion to ZnSe NRs was accompanied by the deposition of ZnO nanocrystals, resulting in the formation of ZnSe–ZnO NRs. By modulating the volume percentage of H2O added, the density of ZnO nanocrystals deposited on ZnSe NRs can be readily controlled. For ZnSe–ZnO NRs, the surface-attached ZnO can serve as an effective electron scavenger for ZnSe due to its lower conduction band potential (−0.10 V vs. NHE) than that of ZnSe (−0.61 V vs. NHE).8 Consequently, the photoexcited electrons of ZnSe NRs would preferentially transfer to ZnO nanocrystals, leaving photogenerated holes at the ZnSe domain to achieve charge separation. Time-resolved photoluminescence (PL) measurements were conducted to explore the interfacial charge carrier dynamics for the as-prepared ZnSe–ZnO NRs. By probing the emission lifetime of ZnSe, the electron transfer event between ZnSe and ZnO for ZnSe–ZnO NRs can be quantitatively analyzed. The fate of the separated charge carriers of ZnSe–ZnO NRs was further examined with a photocatalytic process. It was found that ZnSe–ZnO NRs surpassed pristine ZnSe NRs, N-doped P-25 TiO2, and commercial ZnSe powders in photodegradation of rhodamine B, conceivably resulting from the pronounced charge separation that occurred at the interface of ZnSe/ZnO.
A 1 | τ 1 (ns) | A 2 | τ 2 (ns) | χ 2 | k et (s−1) | |
---|---|---|---|---|---|---|
Pristine ZnSe | 237.8 | 14.36 | 737.8 | 0.80 | 1.035 | — |
ZnSe–ZnO-1 | 211.3 | 11.38 | 861.7 | 0.73 | 1.095 | 1.20 × 108 |
ZnSe–ZnO-2 | 225.0 | 12.81 | 840.2 | 0.76 | 1.084 | 0.66 × 108 |
ZnSe–ZnO-3 | 228.5 | 13.22 | 814.9 | 0.78 | 1.074 | 0.32 × 108 |
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Fig. 1 SEM images of (a) pristine ZnSe and (b), (c), (d) ZnSe–ZnO NRs prepared with H2O volume percentage of 0.8, 1.2, and 1.6 vol%, respectively. Insets show the representative TEM images. The corresponding XRD patterns are shown in (e). |
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Fig. 2 (a) TEM image, (b) TEM-EDS analysis, and (c) HRTEM image of ZnSe–ZnO NRs. In (c), the ZnSe/ZnO interface is highlighted by a dashed line. |
Fig. 2a shows the typical TEM image of the as-obtained ZnSe–ZnO NRs. Evidently, ZnO-free ZnSe NRs or free-standing ZnO nanocrystals were rarely observed in the products, demonstrating the advantage of the current approach to obtain semiconductor nanoheterostructures with high structural integrity. In Fig. 2c, an HRTEM image taken at the interface of NR and nanocrystal region clearly reveals two distinct sets of lattice fringes, which can be respectively assigned to wurtzite ZnSe and wurtzite ZnO crystals. Moreover, the substantial interface of ZnSe/ZnO was existent in ZnSe–ZnO NRs. This interface was essentially important because it ensured the successful electron transfer from ZnSe to ZnO upon light irradiation and thereby the achievement of charge separation.
The success of the current one-step cation exchange route to ZnSe–ZnO NRs was achieved by utilizing H2O as the alkalization reagent. A plausible mechanism for the formation of ZnSe–ZnO NRs was proposed as follows. At the initial stage of reaction, TBP captured Ag+ ions of Ag2Se NRs to form intermediate complexes, which allows the mutual diffusion of Ag+ (outbound) and Zn2+ (inbound) at the anionic framework of NRs. Because of the relatively small volume change during the transformation process,11 ZnSe NRs which preserved the morphology and single crystallinity of the starting Ag2Se formed. When a trace amount of H2O was present, additional reaction associated with TBP alkalization and OH− liberation could occur. As reported in the literature,12 when added to a solution containing alcohol, water and formaldehyde, TBP undergoes alkalization to dissociate into phosphonium cations and OH− ions. Since the increase in the pH value for the current TBP methanolic solution upon the H2O addition was apparent (from pH = 5.25 for solution without H2O to pH = 6.40 for solution with 0.8 vol% H2O), we believed that alkalization of TBP would take place to generate a considerable amount of OH−. On the other hand, during the cation exchange process, PVP was added as the stabilizer to prevent NRs from agglomerating. The PVP-stabilized ZnSe NRs may exhibit capability of Zn2+ adsorption by virtue of the effective coordination between PVP and Zn2+.13 These surface-adsorbed Zn2+ ions then reacted with the TBP-derived OH− to form ZnO through proper dehydration. As a result, ZnO nanocrystals were grown and deposited on the surface of ZnSe NRs. The mechanism of the H2O-induced TBP alkalization described above can be further verified by considering the effect of the increased H2O volume percentage on the ZnO growth of ZnSe–ZnO NRs. As revealed in Fig. 1, the increase in H2O volume percentage caused the formation of ZnSe–ZnO NRs with high ZnO density. This consequence was mainly a result of the more OH− ions generated in TBP methanolic solution with larger H2O volume percentage, which is corroborated by the corresponding increase in solution pH. As more and more OH− ions were involved, formation of ZnO may be facilitated to grow ZnO with an increased amount. Accordingly, ZnSe–ZnO NRs with high ZnO nanocrystal density were obtained upon raising the H2O volume percentage.
Owing to the band alignment between ZnSe and ZnO, the present ZnS–ZnSe NRs exhibited pronounced charge separation upon light irradiation, which can be quantitatively characterized with time-resolved PL measurement and photocatalysis experiment. Fig. 3a represents the time-resolved PL spectra of pristine ZnSe NRs and the three ZnSe–ZnO NR samples. These spectra were fitted with a biexponential function to yield a slow (τ1) and a fast (τ2) decay component, which are relatively assigned to radiative recombination and nonradiative relaxation pathways. The fitting results are summarized in Table 1. For ZnSe–ZnO NRs, emission lifetimes of both components were shorter than those of pristine ZnSe, implying the emergence of an additional nonradiative pathway from the electronic interaction between ZnSe and ZnO. This supposition can be verified by the steady-state PL depression observed for ZnS–ZnO NRs (Fig. S2†). If electron transfer from ZnSe to ZnO was the predominant process dictating the emission quenching of ZnSe for ZnSe–ZnO NRs, we can estimate the electron-transfer rate constant (ket) by the expression ket(ZnSe → ZnO) = (1/τ2)(ZnSe–ZnO) – (1/τ2)(ZnSe).14 Using the emission lifetime data in Table 1, we obtained ket values as 1.20 × 108, 0.66 × 108, and 0.32 × 108 s−1 for ZnSe–ZnO-1, ZnSe–ZnO-2, and ZnSe–ZnO-3, respectively. An obvious decreasing trend in the ket value was noticed for ZnSe–ZnO NRs with increasing ZnO nanocrystal density. This observation suggests that charge separation of ZnSe–ZnO NRs turned decreasingly conspicuous as ZnO nanocrystals density increased. Note that when put in contact with semiconductor nanocrystals, electron scavenger with an excess amount exerts a detrimental influence on the overall charge separation efficiency.15 This adverse effect is due to the consumption of the separated charge carriers in the later-emerging electron–hole recombination process, which reduces the extent of electron scavenging to lead to the less effective charge separation.
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Fig. 3 (a) Time-resolved PL spectra for pristine ZnSe and ZnSe–ZnO NRs. (b) Results of RhB photodegradation for seven relevant samples. |
To further examine the fate of the separated charge carriers for the present ZnSe–ZnO NRs, we performed photocatalysis experiment by using RhB as the test pollutant. Fig. 3b compares the RhB photodegradation results of seven relevant samples, from which several points can be observed. First, pure ZnO nanocrystals showed a small but not negligible photocatalytic activity under visible light illumination, ascribable to the self-photosensitized effect between RhB molecules and ZnO.16 Second, all the three ZnSe–ZnO NRs performed better toward RhB photodegradation than pristine ZnSe NRs did, which can be accounted for by the effective charge separation that took place at the interface of ZnSe/ZnO. This demonstration again addresses the advantage of type-II semiconductor nanoheterostructures for photoconversion applications. Third, as compared to the relevant commercial products such as N-doped P-25 TiO2 and ZnSe powders, the three ZnSe–ZnO NR samples exhibited superior photocatalytic performance under visible light illumination, demonstrating their potential as an efficient visible light-responsive photocatalyst. Lastly, ZnSe–ZnO NRs showed depressed photocatalytic efficiency as the ZnO nanocrystal density increased. This outcome was attributed to the consumption of charge carriers observed for ZnSe–ZnO-2 and ZnSe–ZnO-3 samples as demonstrated in the time-resolved PL investigation. To quantitatively compare the photocatalytic performance of different ZnSe–ZnO samples, the apparent rate constant of RhB photodegradation (kRhB) was calculated using the pseudo-first-order approximation.10 Using the result of Fig. 3b, we obtained kRhB values of 0.042, 0.033, and 0.014 min−1 for ZnSe–ZnO-1, ZnSe–ZnO-2, and ZnSe–ZnO-3, respectively. Evidently, the trend in kRhB variation for ZnSe–ZnO NRs with increasing ZnO nanocrystal density corresponded well with that in ket change. As illustrated in Fig. 4, the correspondence between kRhB and ket can be realized by the causal relation between electron transfer and hole generation. As ZnO nanocrystal density increased, the separated electrons at ZnO became abundant such that electron–hole recombination across the ZnSe/ZnO interface was encouraged, simultaneously leaving delocalized holes of a decreased amount in ZnSe. The reduction in the number of photogenerated holes further led to the depression in the resulting photocatalytic performance. Note that in the case of the present ZnSe–ZnO NRs, photogenerated holes were the exclusive oxidation species for RhB degradation, with which the correlation between charge carrier dynamics and photocatalytic performance (Fig. 4) can be validated. RhB has an oxidation potential of 0.95 V vs. NHE, which makes it a good hole acceptor for ZnSe–ZnO NRs.17 The direct hole-oxidation path for the current RhB photodegradation can be further verified from the controlled experiments. When tert-butyl alcohol, an effective ˙OH radical scavenger,18 was added to RhB solution, no rate change of photodegradation was observed for ZnSe–ZnO NRs. In contrast, if methanol, a typical hole scavenger,19 with a commensurate amount was introduced, significant suppression in RhB photodegradation resulted. These trials reveal that direct hole-oxidation was the primary path for RhB photodegradation in the presence of ZnSe–ZnO NRs.
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Fig. 4 Correlations of ket and kRhB for ZnSe–ZnO NRs. Inset shows the relative band structure of ZnSe–ZnO. |
It might be argued that the observed difference in photocatalytic activity among the three ZnSe–ZnO samples resulted from the variation in the surface area. The BET characterization shows that the surface areas of different ZnSe–ZnO NRs were comparable, which are 19.4, 22.5, and 23.7 cm2 g−1 for ZnSe–ZnO-1, ZnSe–ZnO-2, and ZnSe–ZnO-3, respectively. This result signifies that the variation in photocatalytic performance for different ZnSe–ZnO NRs is mainly related to the interfacial charge carrier dynamics rather than the surface area effect. To further demonstrate the remarkable photocatalytic properties for ZnSe–ZnO NRs, we investigated the stability of the samples by examining their microstructures after used in RhB photodegradation. As shown in Fig. S3,† no appreciable change in the XRD pattern was found upon photocatalysis operation, revealing the considerably high stability for the present ZnSe–ZnO NRs.
Footnote |
† Electronic supplementary information (ESI) available: SEM images, XRD patterns and steady-state PL spectra of relevant samples. See DOI: 10.1039/c2nr32879h |
This journal is © The Royal Society of Chemistry 2013 |