Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy†
Abstract
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP)
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* Corresponding authors
a
Institute for Advanced Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, China
E-mail:
zzhang@scnu.edu.cn
b Max Planck Institute of Microstructure Physics, Weinberg 2 Halle, Germany
c Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, China
d Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP)
Z. Zhang, S. Senz, F. Zhao, L. Chen, X. Gao and J. -M. Liu, RSC Adv., 2012, 2, 8631 DOI: 10.1039/C2RA21013D
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