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Issue 21, 2014
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Flash memory based on solution processed hafnium dioxide charge trapping layer

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Abstract

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory. The thickness, crystallinity and morphology of HfO2 fabricated under various conditions were investigated. X-ray diffraction (XRD) patterns indicated the formation of monoclinic HfO2 crystals with increasing annealing temperature. Atomic force microscopy (AFM) images showed relatively smooth films of HfO2 growth. The annealing temperature-dependent effects on the memory window as well as data retention properties have been discussed. A large memory window and long data retention time have been achieved for the pentacene-based flash memory. The results demonstrate that solution processed HfO2 film could be a promising candidate as a charge trapping layer in printable flash memory.

Graphical abstract: Flash memory based on solution processed hafnium dioxide charge trapping layer

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Publication details

The article was received on 03 Jan 2014, accepted on 21 Mar 2014 and first published on 21 Mar 2014


Article type: Paper
DOI: 10.1039/C4TC00010B
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J. Mater. Chem. C, 2014,2, 4233-4238

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    Flash memory based on solution processed hafnium dioxide charge trapping layer

    J. Zhuang, S. Han, Y. Zhou and V. A. L. Roy, J. Mater. Chem. C, 2014, 2, 4233
    DOI: 10.1039/C4TC00010B

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