Issue 28, 2022

Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics

Abstract

Deposition of hexagonal boron nitride (h-BN) over large areas is an essential requirement for scaling electronic applications of 2D materials. Through an understanding of the physical chemistry of the popular ammonia-borane route, this work demonstrates control that can yield a range of deposits from isolated single crystal islands to polycrystalline monolayers with 15 micron islands to bulk multilayers. By constraining supersaturation both at the source and in the reactor, a five-orders-of-magnitude reduction in the unwanted nanocrystalline boron nitride (n-BN) density per μm2 has been achieved. Clean layers over 6 inch square areas and 4 inch wafer scale transfers prove scalability. The state-of-the-art mobility, 28 000 cm2 v−1 s−1, achieved by graphene transistors synthesized on these h-BN layers is a proof of their having met the substrate requirements of 2D electronics.

Graphical abstract: Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics

Supplementary files

Article information

Article type
Paper
Submitted
12 3月 2022
Accepted
21 6月 2022
First published
24 6月 2022

J. Mater. Chem. C, 2022,10, 10412-10423

Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics

A. Rao and S. Raghavan, J. Mater. Chem. C, 2022, 10, 10412 DOI: 10.1039/D2TC01004F

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