Issue 91, 2021

High performance near-infrared phototransistors via enhanced electron trapping effect

Abstract

A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W−1, high detectivity of 1016 Jones and fairly good photosensitivity in the order of 106.

Graphical abstract: High performance near-infrared phototransistors via enhanced electron trapping effect

Supplementary files

Article information

Article type
Communication
Submitted
30 Ago 2021
Accepted
25 Okt 2021
First published
25 Okt 2021

Chem. Commun., 2021,57, 12123-12126

High performance near-infrared phototransistors via enhanced electron trapping effect

X. Jiang, J. Lu, D. Xue, Y. Wei, Y. Zhang, J. Zhang, Z. Wang, L. Huang and L. Chi, Chem. Commun., 2021, 57, 12123 DOI: 10.1039/D1CC04828G

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