Issue 44, 2014

Epitaxial growth of GaN films on unconventional oxide substrates

Abstract

GaN is a unique material with outstanding optoelectronic properties and is suitable for application in light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs), etc. Usually, GaN films are grown on sapphire substrates. However, due to the relatively large lattice and thermal expansion coefficient mismatches between GaN and sapphire, to obtain high-performance and high-power GaN-based devices is still highly desired. In this regard, many researchers have tried hard to grow GaN films on unconventional oxide substrates other than sapphire, which share relatively small lattice and thermal expansion coefficient mismatches with GaN. This review focuses on the recent progress of the epitaxial growth of GaN films on unconventional oxide substrates. The perspectives for the epitaxial growth of GaN films on unconventional oxide substrates are also discussed.

Graphical abstract: Epitaxial growth of GaN films on unconventional oxide substrates

Associated articles

Article information

Article type
Feature Article
Submitted
27 Upu 2014
Accepted
10 Leo 2014
First published
12 Leo 2014

J. Mater. Chem. C, 2014,2, 9342-9358

Author version available

Epitaxial growth of GaN films on unconventional oxide substrates

W. Wang, W. Yang, H. Wang and G. Li, J. Mater. Chem. C, 2014, 2, 9342 DOI: 10.1039/C4TC01655F

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