Issue 19, 2013

Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

Abstract

A 3D highly conductive urchin-like NiCo2S4 nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo2S4 electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

Graphical abstract: Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

Supplementary files

Article information

Article type
Communication
Submitted
07 jun 2013
Accepted
14 jul 2013
First published
16 jul 2013

Nanoscale, 2013,5, 8879-8883

Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

H. Chen, J. Jiang, L. Zhang, H. Wan, T. Qi and D. Xia, Nanoscale, 2013, 5, 8879 DOI: 10.1039/C3NR02958A

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