Issue 2, 2019

High-performance sub-10 nm monolayer Bi2O2Se transistors

Abstract

A successful two-dimensional (2D) semiconductor successor of silicon for high-performance logic in the post-silicon era should have both excellent performance and air stability. However, air-stable 2D semiconductors with high performance were quite elusive until the air-stable Bi2O2Se with high electron mobility was fabricated very recently (J. Wu, H. Yuan, M. Meng, C. Chen, Y. Sun, Z. Chen, W. Dang, C. Tan, Y. Liu, J. Yin, Y. Zhou, S. Huang, H. Q. Xu, Y. Cui, H. Y. Hwang, Z. Liu, Y. Chen, B. Yan and H. Peng, Nat. Nanotechnol., 2017, 12, 530). Herein, we predict the performance limit of the monolayer (ML) Bi2O2Se metal oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulation at the sub-10 nm gate length. The on-current, delay time, and power-delay product of the optimized n- and p-type ML Bi2O2Se MOSFETs can reach or nearly reach the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS) until the gate lengths are scaled down to 2 and 3 nm, respectively. The large on-currents of the n- and p-type ML Bi2O2Se MOSFETs are attributed to either the large effective carrier velocity (n-type) or the large density of states near the valence band maximum and special shape of the band structure (p-type). A new avenue is thus opened for the continuation of Moore's law down to 2–3 nm by utilizing ML Bi2O2Se as the channel.

Graphical abstract: High-performance sub-10 nm monolayer Bi2O2Se transistors

Supplementary files

Article information

Article type
Paper
Submitted
02 lapkr. 2018
Accepted
01 gruod. 2018
First published
03 gruod. 2018

Nanoscale, 2019,11, 532-540

High-performance sub-10 nm monolayer Bi2O2Se transistors

R. Quhe, J. Liu, J. Wu, J. Yang, Y. Wang, Q. Li, T. Li, Y. Guo, J. Yang, H. Peng, M. Lei and J. Lu, Nanoscale, 2019, 11, 532 DOI: 10.1039/C8NR08852G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements