Issue 10, 2023

Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Abstract

We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, e.g. P(Si(CH3)3)3.

Graphical abstract: Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
27 4 2023
Accepted
19 7 2023
First published
19 7 2023
This article is Open Access
Creative Commons BY license

Nanoscale Horiz., 2023,8, 1411-1416

Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors

Y. Wang, J. Howley, E. N. Faria, C. Huang, S. Carter-Searjeant, S. Fairclough, A. Kirkland, J. J. Davis, F. Naz, M. T. Sajjad, J. M. Goicoechea and M. Green, Nanoscale Horiz., 2023, 8, 1411 DOI: 10.1039/D3NH00162H

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