Ying Wanga,
Haiqiang Lu*a,
Yuanyang Wanga,
Jianhao Qiuab,
Jing Wena,
Kang Zhoub,
Li Chena,
Guanglei Songa and
Jianfeng Yao*b
aSchool of Chemical and Biological Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China. E-mail: luhaiqiang-1900@163.com
bCollege of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China. E-mail: jfyao@njfu.edu.cn
First published on 21st December 2015
N-doped TaOxNy is prepared using ethylenediamine as the nitrogen source by a sol–gel method. The obtained samples are subsequently calcined at 500–900 °C. XRD analysis and XPS survey indicate the presence of immature TaO2 (Ta4+) in the N-doped TaOxNy sample sintered at 550 °C (TaOxNy-550), and the UV results show TaOxNy-550 has a rather strong absorption in the visible light region. The photocatalytic activities of TaOxNy are evaluated in hydrogen generation by water splitting and photodegradation of methyl orange. The N-doped TaOxNy sample sintered at 550 °C shows the highest H2 generation rate of 3.12 mmol g−1 h−1, and only 3.1% methyl orange is left after 90 min irradiation. Such photocatalytic activities are comparable to the conventional nitrogen-doped titania.
Nitrogen doping of oxide semiconductors has attracted considerable attentions due to efficient visible-light absorption by bandgap modulation of photocatalysts such as TiO2, ZnO and Ta2O5.6,9 Such strategy is based on the fact that nitrogen has an atomic valence bond-forming orbital (2p) with a higher oxidation potential than oxygen.10,11 Various nitriding techniques, including ammonolysis, sol–gel, hydrothermal and solvothermal combined post-nitriding, have been developed.6,9 As a conventional method, the sol–gel method is facile and inexpensive to synthesize N-doped oxide semiconductors.2,9,12,13 In 2003, Burda et al. used the sol–gel method to synthesize TiO2−xNx with a nitrogen doping level as high as 8%.14,15 TiO2−xNx was prepared by employing anatase TiO2 with triethylamine at room temperature, and the absorbance regions extended into the visible regions (up to 550 nm). Further studies have demonstrated that hydrazine and ethylenediamine are effective organic sources of nitrogen for doping metal oxides.16,17 Recently, we prepared N-doped TiO2 using ethylenediamine as the nitrogen source by the sol–gel method and heat treatment. An appropriate high temperature treatment (500 °C) removed the organic residues and kept the N-dopant.9 The resulting N-doped titania (TiON-500) performed a high hydrogen production rate of 2.98 mmol g−1 h−1 and an enhanced methyl organic degradation performance.9
Ho et al. prepared N-doped Ta2O5 (TaOxNy) by the sol–gel method for the first time using ethylenediamine as the nitrogen source. The synthesis solution was refluxed under stirring for 72 h to dope N element, and the resulting TaOxNy had a bandgap of 2.3 eV.2 However, the structure properties of TaOxNy were not discussed in detail. In this work, N-doped TaOxNy was prepared by the sol–gel method at room temperature by using ethylenediamine, followed by the heat treatment to remove the organic residues. The combination of Ta4+ and N dopants makes the N-doped TaOxNy photocatalysts exhibit higher activity under visible light, and the photocatalytic performances were evaluated by the degradation of methyl orange and H2 evolution.
![]() | ||
Fig. 1 XRD patterns of different N-doped TaOxNy prepared at 500 (a), 550 (b), 600 (c), 700 (d), 800 (e), 900 °C (f) and bulk Ta2O5. |
Close examinations of XRD patterns of N-doped samples calcined at 500–600 °C indicate there are phase structure changes from “amorphous” to δ-Ta2O5 phase with the increase of temperature (Fig. 2). However, the “amorphous” structure of TaOxNy-500 and TaOxNy-550 includes some immature TaO2 phase (JCPDS: 19-1297). Such phase would probably give special photocatalytic performances for N-doped TaOxNy. The results matched well with Ho's,2 if high calcination temperature was carried out. It is fully indicated that calcinations temperature of N-doped metal oxide play an important role on both properties of material and its photocatalytic performances.
Fig. 3 shows UV-vis spectra of TaOxNy prepared at 500–800 °C. The samples sintered at 500 and 550 °C obviously absorb visible light. The absorption in visible light becomes weaker with the increase of sintering temperature from 500 to 800 °C, which is in accordance with the change in color (inset, Fig. 3). The absorption edge shifts to the shorter wavelength with the sintering temperature increase from 500 to 600 °C. The samples sintered over 600 °C become white and most of the organic matters including N element are removed.
![]() | ||
Fig. 3 UV-visible spectra of TaOxNy samples sintered at 500–800 °C, and the corresponding digital images. |
The sintering temperature plays an important role in the photocatalytic activity of N-doped TaOxNy. Photocatalytic H2 generation by water splitting and photocatalytic degradation of methyl orange were conducted. Fig. 4a shows that TaOxNy-550 has the highest H2 generation rate as high as 3.12 mmol g−1 h−1, which is higher than that of N-doped TiO2 (2.98 mmol g−1 h−1 for TiON-500) reported in our recent work.9 N-doped TaOxNy sintered at 500 °C (TaOxNy-500) has a low H2 generation rate of 0.61 mmol g−1 h−1. The main reason is that the TaOxNy-500 surface (dark in colour) is fully coated by organic residues, which also causes high visible absorption as shown in Fig. 3. TaOxNy sintered over 600 °C display low H2 generation rates due to the removal of N element. At the calcination temperature of 900 °C, the hydrogen generation rate of TaOxNy-900 is the same as the bulk Ta2O5, indicating N element is fully removed. For the photocatalytic degradation of methyl orange (Fig. 4b), TaOxNy-550 shows the high and efficient degradation rate, and only 3.1% methyl orange is left in 90 min irradiation. Such degradation rate is comparable to that of N-doped TiO2 (TiON-500).9 All the samples show the same trend in methyl orange degradation as that of hydrogen generation as shown in Fig. 4a. PL spectra would show the features of excited states and related defects based on the electronic structure and optical characteristics.20 PL spectra of the TaOxNy samples were measured with an excitation wavelength of 325 nm at room temperature (see Fig. S1, ESI†). PL peaks between 425 and 625 nm are observed for all samples, which indicate the recombination of photogenerated electrons and holes. TaOxNy samples sintered at 500–600 °C have very low photoluminescence intensities, and TaOxNy-550 exhibits the lowest photoluminescence signal. This indicates the recombination rate of photogenerated charge carriers is the lowest on the surface of TaOxNy-550. The PL results thus confirm that the sample with a lower PL displays a higher photocatalytic activity. TEM image of TaOxNy-550 reveals it is composed of irregular nanoparticles (Fig. S2†).
![]() | ||
Fig. 4 H2 generation (a) and photocatalytic degradation of methyl orange (b) on TaOxNy sintered at 500–900 °C. |
XPS technique was employed to probe and confirm the N-doped content of TaOxNy samples sintered at 500–800 °C. Global XPS survey indicates the samples contains Ta, O, N and C. The binding energies for Ta 4f, Ta 4d, C 1s, N 1s (396.4 eV), Ta 4p and O 1s11,21 are marked in Fig. 5a. The core level binding energy of Ta 4f gives rise to two peaks at 26.9 and 28.1 eV of Ta 4f7/2 (Ta2O5) and Ta 4f5/2 (Ta2O5), respectively, which indicate the presence of Ta in oxidation state of Ta5+ (Fig. S3†).21 The inset in Fig. 5a shows the XPS spectra of TaOxNy samples in the N 1s region, where very tiny N 1s peak at 396.4 eV is present for TaOxNy sintered at 500–550 °C. The organic residuals and N-doping element are prone to be oxidized at a high temperature. FT-IR spectra of TaOxNy samples sintered at 500–800 °C are shown in Fig. S4.† No characteristic peaks are attributed to the vibrations of the N–Ta–O bond. It shows clearly that most of N element has been oxidized over 500 °C.
![]() | ||
Fig. 5 XPS survey of TaOxNy samples sintered at 500–800 °C, the N 1s peak around the 396.4 eV regions (inset) (a), and the Ta 4f peak of TaOxNy-550 around 26 eV region (b). |
The XPS survey indicates TaOxNy-550 is composed of Ta2O5, TaO2 and Ta3N5 (Fig. 5b).21 The Ta 4f peak around the 26 eV regions shows Ta 4f7/2 (Ta2O5) and Ta 4f5/2 (Ta2O5) peaks at 26.3 and 28.1 eV, respectively. Two peaks of Ta 4f7/2 (25.3 eV) and Ta 4f5/2 (27.2 eV) indicate the presence of TaO2. A small peak at 24.7 eV is ascribed to Ta 4f7/2 (Ta3N5). The Ta4+ and Ta3N5 in TaOxNy-550 is beneficial for the high photocatalytic activities under visible light. EDAX was performed for the element analysis of TaOxNy-550. Only 3.5 wt% N is detected in the sample (Fig. S5†).
As the porous structure is one of the important aspects for catalyst, the surface area and the pore size distribution of TaOxNy-550 was investigated by nitrogen sorption test. Fig. 6a shows the nitrogen adsorption–desorption isotherm that is a typical type IV curve, indicating the presence of meso- and macroporous structure. The BET surface area of TaOxNy-550 is about 72 m2 g−1 and the peak pore size is centered at around 3.6 nm (Fig. 6b). As a comparison, the sample sintered at 800 °C (TaOxNy-800) was also conducted by nitrogen sorption test (Fig. 6a). The nitrogen sorption value is greatly lower than that of TaOxNy-550, which confirms high crystallinity of TaOxNy-800. Its BET surface area decreases to about 7 m2 g−1, and the mean pore size increases to around 26 nm. Based on the nitrogen adsorption–desorption isotherm (Fig. 6a), the large pore size should arise from the intra-crystalline pore.
![]() | ||
Fig. 6 N2 adsorption–desorption isotherms (a) and pore size distributions (b) of TaOxNy-550, TaOxNy-800. |
N-doped Ta2O5 was prepared using ethylenediamine as the nitrogen source by sol–gel method and heat treatment. The organic residues that negatively affect the photocatalytic activity on Ta2O5 surface would be removed after appropriate high temperature (550 °C) treatment. Apart from this, some factors, including crystallinity, N doping level and Ta4+ in TaOxNy, will affect the visible photocatalytic activity of the samples. Obviously, a low crystallinity of TaOxNy samples sintered at less than 500 °C is a reason for their low photocatalytic activity, but it is not the most important reason. Similar to N-doped TiO2, the Ta4+ can produce isolated states in the forbidden gap as well. These Ta4+ defects are occupied states and usually act as donors. The electrons in these sites are excited to the conduction band by a thermal or photoexcitation process to form the unoccupied states. This process corresponds to the visible light absorption.22 Meanwhile, the substituted N atoms (appropriate N doping) will introduce localized N 2p states above the valence band that should be responsible for the red shift of the absorption and narrow the band gap due to the mixing of N 2p states with O 2p states, and thus lower the photon transition energy from the valence band to the conduction band.23 The visible photocatalytic activity of TaOxNy-550 is the highest due to the above reasons.
Footnote |
† Electronic supplementary information (ESI) available: Photoluminescence spectra, TEM image, XPS spectra, FT-IR spectra and energy dispersive analysis of X-ray. See DOI: 10.1039/c5ra23087j |
This journal is © The Royal Society of Chemistry 2016 |