Issue 23, 2023

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3

Abstract

Wide bandgap semiconductors such as gallium oxide (Ga2O3) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga2O3 substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p–n diodes from Ga2O3 has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga2O3 by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. The quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga2O3 vertical heterojunctions are optimized by substrate planar orientation (−201), combined with 2D WS2 exfoliated layers and Ti contacts, and show record rectification ratios (>106) concurrently with ON-Current density (>103 A cm−2) for application in power rectifiers.

Graphical abstract: Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3

Supplementary files

Article information

Article type
Paper
Submitted
28 apr. 2023
Accepted
15 maí 2023
First published
23 maí 2023

Nanoscale, 2023,15, 9964-9972

Author version available

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3

C. Leblanc, D. Herath Mudiyanselage, S. Song, H. Zhang, A. V. Davydov, H. Fu and D. Jariwala, Nanoscale, 2023, 15, 9964 DOI: 10.1039/D3NR01987J

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