Issue 34, 2019

Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications

Abstract

Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions. Electrocatalytic and photocatalytic water splitting into hydrogen and oxygen is a promising and emerging technology. Heterogeneous nanostructures based on semiconductor materials have attracted much attention to be used as catalysts, co-catalysts, photocatalysts and photoabsorbers. Development of transition metal dichalcogenide (TMDC) semiconductors with two dimensional (2D) layered structures and peculiar physical and chemical properties are playing a pivotal role in the heterogeneous photocatalytic hydrogen evolution (PHE) reaction. The energy band gap tuning with the thickness of the layers and heterojunction interface formation have given an opportunity to design and develop combinations of both photocatalysts and co-catalysts using semiconductor TMDCs. This contribution summarizes the recent investigations on the 2D semiconductor TMDC (MoS2, WS2, MoSe2 and WSe2) based heterogeneous nanostructures as efficient materials for photocatalytic water splitting applications to produce hydrogen. The literature survey clearly shows that more than 80% of the researchers in this field have worked on MoS2-based heterogeneous nanocomposites, as it is the 2nd most studied material after graphene. It is also evident that among the materials used so far for the PC HER activity, MoS2-based heterogeneous nanocomposites are on top with the highest hydrogen evolution rate and stability. Since the physical and chemical properties of the members are identical, the future research and development would focus on the manipulation of the rest of the TMDC members to achieve the future needs of clean and sustainable energy production.

Graphical abstract: Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications

Article information

Article type
Perspective
Submitted
14 אפר 2019
Accepted
24 יול 2019
First published
24 יול 2019

Dalton Trans., 2019,48, 12772-12802

Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications

C. K. Sumesh and S. C. Peter, Dalton Trans., 2019, 48, 12772 DOI: 10.1039/C9DT01581G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements