Issue 34, 2018

Atomically thin semiconducting penta-PdP2 and PdAs2 with ultrahigh carrier mobility

Abstract

It is highly desirable to reach a high carrier mobility in two-dimensional (2D) atomic crystals with a modest band gap for electronic applications. In this study, two 2D semiconducting materials, penta-PdX2 (X = P, As), are found to be promising candidates to approach this goal. Both penta-PdP2 and penta-PdAs2 have a band gap of about 0.7–0.8 eV. Their carrier mobility is up to 104 cm2 V−1 s−1 for electrons and 105 cm2 V−1 s−1 for holes, among the highest in 2D semiconductors. Moreover, the effective mass and band gap can be effectively tuned by applying a biaxial strain. The electron effective mass climbs up firstly and then largely declines under tensile load with a turning point at 5% for penta-PdP2 and 2% for penta-PdAs2. Furthermore, penta-PdX2 monolayers exhibit strong optical absorption in a wide wavelength range. All these outstanding properties render penta-PdX2 promising candidates for ultra-fast electronic and optoelectronic applications.

Graphical abstract: Atomically thin semiconducting penta-PdP2 and PdAs2 with ultrahigh carrier mobility

Supplementary files

Article information

Article type
Communication
Submitted
09 juil. 2018
Accepted
07 août 2018
First published
09 août 2018

J. Mater. Chem. C, 2018,6, 9055-9059

Atomically thin semiconducting penta-PdP2 and PdAs2 with ultrahigh carrier mobility

H. Yuan, Z. Li and J. Yang, J. Mater. Chem. C, 2018, 6, 9055 DOI: 10.1039/C8TC03368D

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