Issue 9, 2004
From the journal:

Journal of Materials Chemistry

Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Yoshihito Kunugi,*a   Kazuo Takimiya,b   Yuta Toyoshima,a   Kazuo Yamashita,a   Yoshio Asob  and  Tetsuo Otsubob  

* Corresponding authors

a Faculty of Integrated Arts and Sciences, Hiroshima University, 1-7-1 Kagamiyama, Higashi-Hiroshima 739-8521, Japan
E-mail: kunugi@hiroshima-u.ac.jp
Fax: +81-824-24-0757
Tel: +81-824-24-6533

b Graduated School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
E-mail: ktakimi@hiroshima-u.ac.jp
Fax: +81-824-24-5494
Tel: +81-824-24-7734

Abstract

n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.

Graphical abstract: Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

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Article information

DOI
https://doi.org/10.1039/B401209G
Article type
Communication
Submitted
26 janv. 2004
Accepted
23 mars 2004
First published
06 avr. 2004

J. Mater. Chem., 2004,14, 1367-1369

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Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Y. Kunugi, K. Takimiya, Y. Toyoshima, K. Yamashita, Y. Aso and T. Otsubo, J. Mater. Chem., 2004, 14, 1367 DOI: 10.1039/B401209G

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