Issue 14, 2024

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Abstract

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

Graphical abstract: Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Supplementary files

Article information

Article type
Communication
Submitted
29 mai 2024
Accepted
12 juin 2024
First published
19 juin 2024

Analyst, 2024,149, 3716-3720

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

A. Hussain, K. Mancini, Y. Khatib and G. D. O'Neil, Analyst, 2024, 149, 3716 DOI: 10.1039/D4AN00768A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements