Issue 36, 2022

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Abstract

Ultraviolet (UV) photodetectors (PDs) have found widespread application in various fields, such as environmental protection, life sciences, secure communications, automated systems, and missile tracking, which renders UVPDs the most important component in modern optoelectronic devices and systems. In the past decade, a large number of UVPDs with various device structures and fast response speed have been reported. While most of the UVPD devices are usually assembled from Si and other semiconductor materials, II–VI group semiconductors (ZnS, ZnSe, etc.), which have a wide bandgap and high exciton binding energy, are regarded as potentially important candidates for high-performance UVPD application as well. In this review, we comprehensively discuss the basic concepts and operation mechanisms of UVPDs, which are key factors for rational comparison between different photodetectors. In addition, the main research status of UVPDs based on II–VI group semiconductors is reviewed. Some emerging techniques to optimize device performance are discussed as well. Due to the trade-off between the two key parameters of the responsivity and response time, the ultimate performance of some II–VI group semiconductor-based UVPDs remains inadequate. And then, the initial applications based on II–VI group semiconductor photodetectors are mentioned. Finally, the current challenges and future directions of II–VI group semiconductor-based UVPDs are outlined and discussed, and general advice for realizing novel high-performance photodetectors and their applications is given to provide a guideline for the future development of this fast-developing field.

Graphical abstract: Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Article information

Article type
Review Article
Submitted
23 mai 2022
Accepted
07 août 2022
First published
08 sept. 2022

J. Mater. Chem. C, 2022,10, 12929-12946

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

J. Wang, Y. Xing, F. Wan, C. Fu, C. Xu, F. Liang and L. Luo, J. Mater. Chem. C, 2022, 10, 12929 DOI: 10.1039/D2TC02127G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements