The synthesis and formation mechanism of nonpolar InN nanoplates

Abstract

High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M-plane of GaN nanowires (NWs) as a template, with features creating a potential advantage for their use in terahertz emitter/detector devices. The formation of the 2D InN nanosheets may have been due to self-limiting epitaxial growth, which is in turn explained by lattice induction theory and surface distortion effects.