Growth mechanism of helical γ-Dy2S3 single crystals

Abstract

Unusual helical single crystals of γ-Dy₂S₃ were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy₂S₃ single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy₂S₃ transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy₂S₃ and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.