Issue 22, 2017

Configuration-dependent anti-ambipolar van der Waals p–n heterostructures based on pentacene single crystal and MoS2

Abstract

Recently, van der Waals heterostructures (vdWHs) have trigged intensive interest due to their novel electronic and optoelectronic properties. The vdWHs could be achieved by stacking two dimensional layered materials (2DLMs) on top of another and vertically kept by van der Waals forces. Furthermore, organic semiconductors are also known to interact via van der Waals forces, which offer an alternative for the fabrication of organic–inorganic p–n vdWHs. However, the performances of organic–inorganic p–n vdWHs produced so far are rather poor, owing to the unmatched electrical property between the 2DLMs and organic polycrystalline films. To make improvements in such novel heterostructure architectures, here we adopt high quality organic single crystals instead of polycrystalline films to construct a pentacene/MoS2 p–n vdWH. The vdWHs show a much higher current density and better anti-ambipolar characteristics with a highest transconductance of 211 nS. Moreover, device configuration-dependent transfer characteristics are demonstrated and a mechanism of a gate bias modulated vertical space charge zone existing at the vertical p–n vdWHs interface is proposed. These findings provide a new route to optimize the organic–inorganic p–n vdWHs and a guideline for studying the intrinsic properties of vdWHs.

Graphical abstract: Configuration-dependent anti-ambipolar van der Waals p–n heterostructures based on pentacene single crystal and MoS2

Supplementary files

Article information

Article type
Paper
Submitted
14 mars 2017
Accepted
07 mai 2017
First published
10 mai 2017

Nanoscale, 2017,9, 7519-7525

Configuration-dependent anti-ambipolar van der Waals p–n heterostructures based on pentacene single crystal and MoS2

J. Dong, F. Liu, F. Wang, J. Wang, M. Li, Y. Wen, L. Wang, G. Wang, J. He and C. Jiang, Nanoscale, 2017, 9, 7519 DOI: 10.1039/C7NR01822C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements