Issue 47, 2021

Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Abstract

We report a series of new halogenated bis(acenaphthylene)dione (BAN) derivatives and study the effect of their solid-state organization on optoelectronic properties and electron transport measured in n-type organic field-effect transistors (OFETs).

Graphical abstract: Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Supplementary files

Article information

Article type
Communication
Submitted
08 août 2021
Accepted
27 sept. 2021
First published
11 oct. 2021

CrystEngComm, 2021,23, 8255-8259

Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Y. Liu, A. Dadvand, H. M. Titi, E. Hamzehpoor and D. F. Perepichka, CrystEngComm, 2021, 23, 8255 DOI: 10.1039/D1CE01047F

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