Issue 91, 2021
From the journal:

Chemical Communications

High performance near-infrared phototransistors via enhanced electron trapping effect†

Xingyu Jiang,‡a   Jie Lu,‡a   Di Xue,a   Yujia Wei,a   Yadan Zhang,a   Jidong Zhang,b   Zi Wang,*a   Lizhen Huang ORCID logo *a  and  Lifeng Chi ORCID logo *a  

* Corresponding authors

a Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu, P. R. China
E-mail: chilf@suda.edu.cn, lzhuang@suda.edu.cn, wangzi2020@gusulab.ac.cn

b Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China

Abstract

A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W−1, high detectivity of 1016 Jones and fairly good photosensitivity in the order of 106.

Graphical abstract: High performance near-infrared phototransistors via enhanced electron trapping effect

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Article information

DOI
https://doi.org/10.1039/D1CC04828G
Article type
Communication
Submitted
30 Aug 2021
Accepted
25 Oct 2021
First published
25 Oct 2021

Chem. Commun., 2021,57, 12123-12126

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High performance near-infrared phototransistors via enhanced electron trapping effect

X. Jiang, J. Lu, D. Xue, Y. Wei, Y. Zhang, J. Zhang, Z. Wang, L. Huang and L. Chi, Chem. Commun., 2021, 57, 12123 DOI: 10.1039/D1CC04828G

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