Issue 16, 2023

Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes

Abstract

Lead halide perovskite nanocrystals are promising for next-generation high-definition displays, especially in light of their tunable bandgaps, high color purities, and high carrier mobility. Within the past few years, the external quantum efficiency of perovskite nanocrystal-based light-emitting diodes has progressed rapidly, reaching the standard for commercial applications. However, the low operational stability of these perovskite nanocrystal-based light-emitting diodes remains a crucial issue for their industrial development. Recent experimental evidence indicates that the migration of ionic species is the primary factor giving rise to the performance degradation of perovskite nanocrystal-based light-emitting diodes, and ion migration is closely related to the defects on the surface of perovskite nanocrystals and at the grain boundaries of their thin films. In this review, we focus on the central idea of surface reconstruction of perovskite nanocrystals, discuss the influence of surface defects on halide ion migration, and summarize recent advances in resurfacing perovskite nanocrystal strategies toward mitigating halide ion migration to improve the stability of the as-fabricated light-emitting diode devices. From the perspective of perovskite nanocrystal resurfacing, we set out a promising research direction for improving both the spectral and operational stability of perovskite nanocrystal-based light-emitting diodes.

Graphical abstract: Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes

Article information

Article type
Review Article
Submitted
04 Apr 2023
First published
24 Jul 2023

Chem. Soc. Rev., 2023,52, 5516-5540

Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes

J. Yang, J. Wang, Y. Yin and H. Yao, Chem. Soc. Rev., 2023, 52, 5516 DOI: 10.1039/D3CS00179B

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