CsCu2I3 thin films prepared by different deposition methods for ultraviolet photodetectors with imaging capability

Abstract

Recently, copper halide perovskite CsCu₂I₃ has been reported to be a prospective material for short-wavelength optoelectronic devices due to its superior photophysical properties. In this work, CsCu₂I₃ thin films are investigated by four different preparation strategies including pulsed laser deposition, vacuum thermal evaporation, laser-assisted chemical vapor deposition and spin coating. The crystal quality and photoelectric properties of CsCu₂I₃ thin films prepared by different deposition methods have been studied. Heterojunction photodetectors based on p-CsCu₂I₃/n-GaN are constructed and the photoresponse characteristics of the photodetectors are investigated. The results show that CsCu₂I₃ thin films with high-quality can be prepared by different deposition methods. In addition, the photodetectors are used as sensing pixels in an ultraviolet imaging system, and the imaging patterns are realized. The photodetectors with good stability exhibiting a sensitive ultraviolet photoresponse and imaging capability might pave the way for developing Cu-based perovskite hybrid photoelectric devices.