Issue 41, 2025

Rational methodology of V–Al alloy-electrorefining protocols promotes high purity vanadium metal

Abstract

Molten salt electrolysis is a promising method for producing metallic vanadium, overcoming the limitations of conventional processes, such as high purity requirements for raw materials and high impurity content. This study introduces an innovative approach utilizing soluble vanadium–aluminum alloy anodes in KCl–LiCl molten salt, where vanadium is dissolved as V2+ and V3+. Optimal conditions were identified as 0.3 A cm−2 current density, 500 °C temperature, and 6 h duration. High purity metallic vanadium was prepared under these conditions, and the electrolysis efficiency reached 89.53%. Electrochemical analysis revealed three reduction processes: Al(III) → Al, V(III) → V(II) and V(II) → V. In molten salts, vanadium ions existed in coordination forms as VCl2, VCl3, VCl42−, and VCl63−, while aluminum ions were present as AlCl4. The process was confirmed as diffusion-controlled, with calculated V(III) diffusion coefficients. Nucleation mechanism analysis demonstrated dual vanadium deposition pathways: instantaneous and progressive nucleation. Fluoride ions were found to enhance reaction kinetics through chloride substitution in aluminum complexes, increasing free chloride availability for vanadium coordination and improving ion mobility. The developed method offers significant advantages in energy efficiency and product quality compared to traditional metallurgical approaches, providing insights for optimization of molten salt electrolysis systems in refractory metal production.

Graphical abstract: Rational methodology of V–Al alloy-electrorefining protocols promotes high purity vanadium metal

Article information

Article type
Paper
Submitted
26 Jul 2025
Accepted
16 Sep 2025
First published
22 Sep 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 34768-34780

Rational methodology of V–Al alloy-electrorefining protocols promotes high purity vanadium metal

Q. Zhang, Y. Fan, Y. Zhang, P. Liu, H. Liu, Z. Zhang and X. Fu, RSC Adv., 2025, 15, 34768 DOI: 10.1039/D5RA05411G

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