Correction: HfO2-based ferroelectric synaptic devices: challenges and engineering solutions

Taegyu Kwon; Hyeong Seok Choi; Dong Hyun Lee; Dong Hee Han; Yong Hyeon Cho; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Taehwan Moon; Min Hyuk Park

doi:10.1039/D5CC90068A

Correction: HfO₂-based ferroelectric synaptic devices: challenges and engineering solutions

Taegyu Kwon,^a Hyeong Seok Choi,^a Dong Hyun Lee,^a Dong Hee Han,^a Yong Hyeon Cho,^a Intak Jeon,^b Chang Hwa Jung,^b Hanjin Lim,*^b Taehwan Moon*^c and Min Hyuk Park*^ade

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* Corresponding authors

^a Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
E-mail: minhyuk.park@snu.ac.kr

^b Semiconductor Research and Development Center, Samsung Electronics Company, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, Republic of Korea
E-mail: hanjin.lim@samsung.com

^c Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Republic of Korea
E-mail: taehwanm@ajou.ac.kr

^d Institute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea

^e Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea

Abstract

Correction for ‘HfO₂-based ferroelectric synaptic devices: challenges and engineering solutions’ by Taegyu Kwon et al., Chem. Commun., 2025, 61, 3061–3080, https://doi.org/10.1039/d4cc05293e.

Chemical Communications

Correction: HfO₂-based ferroelectric synaptic devices: challenges and engineering solutions

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Correction: HfO₂-based ferroelectric synaptic devices: challenges and engineering solutions

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