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Issue 25, 2020
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Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

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Abstract

The impacts of pulsed-flow growth on aluminium incorporation in polar (0001), semipolar (10[1 with combining macron]3) and (11[2 with combining macron]2), as well as nonpolar (10[1 with combining macron]0) AlGaN layers have been investigated. The layers were grown simultaneously on differently oriented AlN/sapphire templates by metal–organic vapour phase epitaxy. The AlN mole fraction (0 < xAlN ≤ 0.85) of the layers was varied by simply changing the supply time of the aluminium precursor while keeping nitrogen and gallium precursors constant. Phase separation has been observed for the (0001) and (11[2 with combining macron]2) layers by X-ray diffraction, and is attributed to their different surface reconstructions during growth. In contrast, no phase separation has been observed for the (10[1 with combining macron]0) and (10[1 with combining macron]3) layers, attributed to their stable surfaces during growth. The AlN mole fraction of the differently oriented layers generally follows the order: (11[2 with combining macron]2) < (0001) < (10[1 with combining macron]3) ≤ (10[1 with combining macron]0), attributed to their different surface dangling-bond densities. By means of room-temperature photoluminescence measurements, high carbon-incorporation has quantitatively been found in all the layers.

Graphical abstract: Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

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Article information


Submitted
17 Mar 2020
Accepted
18 May 2020
First published
18 May 2020

J. Mater. Chem. C, 2020,8, 8668-8675
Article type
Paper

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

D. V. Dinh, N. Hu, Y. Honda, H. Amano and M. Pristovsek, J. Mater. Chem. C, 2020, 8, 8668
DOI: 10.1039/D0TC01369B

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