Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.



Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Abstract

The impacts of pulsed-flow growth on aluminium incorporation in polar (0001), semipolar (10-13) and (11-22), as well as nonpolar (10-10) AlGaN layers have been investigated. The layers were grown simultaneously on differently oriented AlN/sapphire templates by metal-organic vapour phase epitaxy. The AlN mole fraction (0 < xAlN ≤ 0.85) of the layers was varied by simply changing the supply time of aluminium precursor while keeping nitrogen and gallium precursors constant. Phase separation has been observed for the (0001) and (11-12) layers by x-ray diffraction, which is attributed to their different surface reconstructions during growth. In contrast, no phase separation has been observed for the (10-10) and (10-13) layers, attributed to their stable surfaces during growth. The AlN mole fraction of the differently oriented layers generally follows the order: (11-22)<(0001)<(10-13)≤(10-10), attributed to their different surface dangling bonds. By means of room-temperature luminescence measurements, highly carbon-incorporation has quantitatively been found in all the layers.

Back to tab navigation

Article information


Submitted
17 Mar 2020
Accepted
18 May 2020
First published
18 May 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Paper

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

D. V. Dinh, N. Hu, Y. Honda, H. Amano and M. Pristovsek, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC01369B

Social activity

Search articles by author

Spotlight

Advertisements