Multilevel Vertical Photonic Memory Transistor Based on Organic Semiconductor/Inorganic Perovskite Quantum Dots Blends
Organic field effect transistor (OFET) photonic memory has emerged as one of the most promising memory devices for the era of big data as its easily integrated structure, non-destructive reading and multi-bit data storage. However, the light intensity for the realization of high discrepancies between multilevel storage was across several orders of magnitude and the responding erasing voltage was required up to tens of volts for several seconds. Hence, for the first time, a vertical OFET photonic memory based on organic semiconductor/inorganic perovskite quantum dots blends was demonstrated. Owing to the intimate interaction between channel and charge trapping layer (perovskite quantum dots) and vertical architecture with ultrashort channel (downscaling the channel length from tens of micrometers to ~50 nm), the photonic memory transistor realized the recognition of light information and displayed as 8 current level storage with high discrepancies, along with a large memory window (66.5 V) under low light intensity (0.05~0.5 mW/cm2) and relatively low erasing voltage pulses (≤ 10 V), which is better than previous reported on the traditional photonic memory. Moreover, the memory devices showed excellent multilevel switching responses and could maintain stable endurance properties and retention characteristics. This work not only provided a simple implementation method of high-performance photonic memory, but also promised great potential for the realization of multilevel storage under low illumination conditions and low erasing voltage.