Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Author affiliations


We report on a transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the Fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by the resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1 μm-long device made from a nanowire of 50 nm in diameter, we extracted a bandgap energy of 190–220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260 nm-long device is found to exhibit a finite off-state current and a circumference-normalized on-state hole current of 11 μA μm−1 at VD = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron–hole quantum systems and hole based spin qubits.

Graphical abstract: Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Back to tab navigation

Supplementary files

Article information

28 Jan 2020
24 Mar 2020
First published
24 Mar 2020

Nanoscale, 2020, Advance Article
Article type

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

B. Dalelkhan, D. J. O. Göransson, C. Thelander, K. Li, Y. J. Xing, V. F. Maisi and H. Q. Xu, Nanoscale, 2020, Advance Article , DOI: 10.1039/D0NR00775G

Social activity

Search articles by author