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Issue 39, 2020
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Morphology-controlled MoS2 by low-temperature atomic layer deposition

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Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2 are materials for multifarious applications such as sensing, catalysis, and energy storage. Due to their peculiar charge-transport properties, it is always desired to control their morphologies from vertical nanostructures to horizontal basal-plane oriented smooth layers. In this work, we established a low-temperature ALD process for MoS2 deposition using bis(t-butylimino)bis(dimethylamino)molybdenum(VI) and H2S precursors. The ALD reaction parameters, including reaction temperature and precursor pulse times, are systematically investigated and optimized. Polycrystalline MoS2 is conformally deposited on carbon nanotubes, Si-wafers, and glass substrates. Moreover, the morphologies of the deposited MoS2 films are tuned from smooth film to vertically grown flakes, and to nano-dots, by controlling the reaction parameters/conditions. It is noticed that our MoS2 nanostructures showed morphology-dependent optical and electrocatalytic properties, allowing us to choose the required morphology for a targeted application.

Graphical abstract: Morphology-controlled MoS2 by low-temperature atomic layer deposition

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Supplementary files

Article information


Submitted
19 May 2020
Accepted
20 Sep 2020
First published
25 Sep 2020

This article is Open Access

Nanoscale, 2020,12, 20404-20412
Article type
Paper

Morphology-controlled MoS2 by low-temperature atomic layer deposition

C. Shen, M. H. Raza, P. Amsalem, T. Schultz, N. Koch and N. Pinna, Nanoscale, 2020, 12, 20404 DOI: 10.1039/D0NR03863F

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