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Issue 64, 2020
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Atomically dispersed metal sites stabilized on a nitrogen doped carbon carrier via N2 glow-discharge plasma

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Abstract

A novel, facile and universal N2 plasma approach to form single atom metal sites (Pt, Pd, Ag, Cu, and Co) is proposed. Fast nucleation and slow growth of metal ions under low temperature plasma are the premise to form single atoms. These isolated metal atoms are subsequently trapped by in situ doped nitrogen. We provide a new route to expand the toolbox of single-atoms preparation.

Graphical abstract: Atomically dispersed metal sites stabilized on a nitrogen doped carbon carrier via N2 glow-discharge plasma

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Article information


Submitted
23 Apr 2020
Accepted
01 Jul 2020
First published
01 Jul 2020

Chem. Commun., 2020,56, 9198-9201
Article type
Communication

Atomically dispersed metal sites stabilized on a nitrogen doped carbon carrier via N2 glow-discharge plasma

W. Tang, J. Li, J. Zheng, W. Chu and N. Wang, Chem. Commun., 2020, 56, 9198
DOI: 10.1039/D0CC02949A

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