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Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

Abstract

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used for gate dielectrics, respectively. These devices show p-channel normally-off FET characteristics. The μ value of 1.34 cm2 V-1 s-1 is obtained in (C14H29)2-picene thin-film FET, where 500 μm thick polyethylene terephthalate (PET) substrate and 1 μm thick parylene are used for substrate and gate dielectric, respectively. The FET characteristics of N,N’-dioctyl-3,4,9,10-perylenedicarboximide (PTCDIC8) thin-film FETs formed on PET and polyethylene naphthalate (PEN) substrates are also reported, showing n-channel normally-off FET characteristics. Moreover, the excellent FET performance is obtained in (C14H29)2-picene thin-film FET using high-k dielectric, ZrO2, which is formed on 125 μm thick transparent PET substrate, showing p-channel normally-off FET properties. The μ value reaches 5.1 cm2 V-1 s-1 in the FET device. We report the bias stress effect for flexible [6]phenacene thin film FETs which are fabricated on PET and PEN substrates. Two types of experiments are performed for investigating bias stress effect on FET, and the bias stress effect under light irradiation is much different from that under no irradiation. This difference is well explained by the hole-filling of trap states by electron excitation. We show the characteristics of complementary MOS inverter (CMOS), constituted with [6]phenecene thin-film FET (p-channel) and PTCDIC8 thin-film FET (n-channel) formed on PET and PEN substrates, i.e., flexible CMOS inverter. The maximum gain reaches 300. Furthermore, we report low-voltage operation for flexible CMOS inverter, where ZrO2 is used as gate dielectric. Through this study, we have achieved the fabrication of flexible thin-film FETs with high μ and low voltage operation, and flexible CMOS inverters with high gain as well as low operation voltage. This study would provide the basis for the future practical / human-compatible electronic devices.

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Publication details

The article was received on 20 Nov 2018, accepted on 16 Apr 2019 and first published on 16 Apr 2019


Article type: Paper
DOI: 10.1039/C8TC05824E
Citation: J. Mater. Chem. C, 2019, Accepted Manuscript

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    Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

    E. Pompei, C. Turchetti, S. Hamao, A. Miura, H. Goto, H. Okamoto, A. Fujiwara, R. Eguchi and Y. Kubozono, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C8TC05824E

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