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Issue 2, 2019
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Transparent metal-oxide nanowires and their applications in harsh electronics

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Due to their excellent physical and chemical properties, one-dimensional (1D) transparent metal-oxide nanostructures, especially nanowires (NWs), are widely considered to be promising candidates for next-generation high-performance electronics. Meanwhile, with increasing industrial demand for electronics which can reliably function in harsh environments, such as high humidity, high temperature, and robust operating environments, 1D metal-oxide nanostructures with wide bandgaps and high stabilities are attracting increasing interest for devices operating in extreme conditions. In this article, we provide a comprehensive review on the recent advances in high-performance transparent metal-oxide NWs and their corresponding device applications in harsh electronics. We begin with a brief introduction of different methodologies for the controllable synthesis of high-quality metal-oxide NWs, followed by an evaluation of the physical limitations of these nanomaterials and approaches for addressing their electrical contact issues. Importantly, the operating principles of transistors, photodetectors and gas sensors based on these 1D metal-oxide nanostructures as well as some excellent examples will be thoroughly discussed for harsh environment operation. The final section describes the challenges for the practical utilization of 1D metal-oxide nanostructures for industrial applications and concludes with an outlook on the future development of these NWs for harsh electronics.

Graphical abstract: Transparent metal-oxide nanowires and their applications in harsh electronics

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Publication details

The article was received on 06 Sep 2018, accepted on 25 Oct 2018 and first published on 07 Nov 2018

Article type: Review Article
DOI: 10.1039/C8TC04501A
Citation: J. Mater. Chem. C, 2019,7, 202-217

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    Transparent metal-oxide nanowires and their applications in harsh electronics

    Z. Zhou, C. Lan, R. Wei and J. C. Ho, J. Mater. Chem. C, 2019, 7, 202
    DOI: 10.1039/C8TC04501A

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