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Abstract | Cited by

A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

Graphical abstract: Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

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