Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

Qiushi Ruan; Mustafa K. Bayazit; Vankayala Kiran; Jijia Xie; Yiou Wang; Junwang Tang

doi:10.1039/C9CC03084K

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Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films†

Qiushi Ruan,

^a Mustafa K. Bayazit,

^ab Vankayala Kiran,^ac Jijia Xie,

^a Yiou Wang

^ad and Junwang Tang

*^a

Author affiliations

* Corresponding authors

^a Solar Energy & Advanced Materials Research Group, Department of Chemical Engineering, UCL Torrington Place, London, UK
E-mail: junwang.tang@ucl.ac.uk

^b Sabanci University Nanotechnology Research and Application Center, Tuzla, Istanbul, Turkey

^c Department of Chemistry, BITS Pilani, K. K. Birla Goa Campus, Goa 403 726, India

^d Chair for Photonics and Optoelectronics, Nano-Institute Munich, Ludwig-Maximilians-Universität München, Königinstr. 10, 80539 Munich, Germany

Abstract

We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C₃N₄ photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C₃N₄ film was determined to be ca. 1000 nm.

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Article information

DOI: https://doi.org/10.1039/C9CC03084K
Article type: Communication
Submitted: 20 Apr 2019
Accepted: 22 May 2019
First published: 28 May 2019
This article is Open Access

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Chem. Commun., 2019,55, 7191-7194

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Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films

Q. Ruan, M. K. Bayazit, V. Kiran, J. Xie, Y. Wang and J. Tang, Chem. Commun., 2019, 55, 7191 DOI: 10.1039/C9CC03084K

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Chemical Communications