Jump to main content
Jump to site search


Out of plane stacking InSe-based heterostructures towards high performance electronic and optoelectronic devices using graphene electrode

Abstract

Due to their tailored energy band alignments, the integration of two-dimensional materials with out of plane stacking structure provides unprecedented opportunities to fabricate novel electronic and optoelectronic devices. Here, we report the vertical integration of InSe/graphene and InSe/WSe2 heterostructures to enable superior properties. The InSe/graphene heterostructure shows a large current density up to 1646 A•cm-2, which is potential candidate for high current flexible device to enable three dimension integration. Meanwhile, the InSe/WSe2 heterostructure exhibits a high rectification ratio of 103, a decent responsivity of 83 A/W, and a superior detectivity of 1.55×1012 Jones, simultaneously. Theoretical calculation indicates that the superior device performance is attributed to the type II band alignment of InSe and WSe2, which enables efficient separation of photo-generated electron-hole pairs. This study paves the facile way for the fabrication of various functional heterostructures for next-generation electronic and optoelectronic applications.

Back to tab navigation

Supplementary files

Publication details

The article was received on 04 Sep 2018, accepted on 11 Oct 2018 and first published on 12 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04459G
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
  •   Request permissions

    Out of plane stacking InSe-based heterostructures towards high performance electronic and optoelectronic devices using graphene electrode

    Z.Q. Zheng, W. Gao, Y. Li, C. Xia, J. Du, Y. Zhao and J. Li, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC04459G

Search articles by author

Spotlight

Advertisements