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Issue 46, 2018
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Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode

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Abstract

Due to their tailored energy band alignments, the integration of two-dimensional materials with out of plane stacking structures provides unprecedented opportunities to fabricate novel electronic and optoelectronic devices. Here, we report the vertical integration of Au–InSe–graphene and graphene–InSe/WSe2–graphene heterostructures to achieve superior properties. The InSe/graphene heterostructure shows a large current density up to 1646 A cm−2, which makes it a potential candidate for high current flexible devices to enable three dimensional integration. Meanwhile, the graphene–InSe/WSe2–graphene heterostructure exhibits a high rectification ratio of 103, a decent responsivity of 83 A W−1, and a superior detectivity of 1.55 × 1012 Jones, simultaneously. Theoretical calculation indicates that the superior device performance can be attributed to the type II band alignment of InSe and WSe2, which enables efficient separation of photo-generated electron–hole pairs. This study paves the way for the facile fabrication of various functional heterostructures for next-generation electronic and optoelectronic applications.

Graphical abstract: Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode

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Publication details

The article was received on 04 Sep 2018, accepted on 11 Oct 2018 and first published on 12 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04459G
Citation: J. Mater. Chem. C, 2018,6, 12509-12517
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    Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode

    W. Gao, Z. Zheng, Y. Li, C. Xia, J. Du, Y. Zhao and J. Li, J. Mater. Chem. C, 2018, 6, 12509
    DOI: 10.1039/C8TC04459G

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