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Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP3) monolayer tuned by electric and optical ways

Abstract

Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for the spintronic nanodevices based on two-dimensional materials. Here, we propose both the electric and optical tuning of the spin-polarized electronic transport properties of the indium triphosphide (InP3) monolayer which is doped with Ge atoms, by using quantum transport calculations. The spin degeneration of the InP3 monolayer is lifted due to the doping of Ge atoms. By applying a small bias voltage, a fully spin-polarized current can be obtained along both the armchair and zigzag directions. Moreover, a remarkable NDR is observed for the current along the zigzag direction, which shows a huge peak-to-valley ratio of 3.1*10^3, while in the armchair direction a less peak-to-valley ratio of 5.5 is obtained. Alternatively, a fully spin-polarized photocurrent can also be generated under the illumination of the linearly-polarized light by tuning either the photon energy or the polarization angle.

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Publication details

The article was received on 04 Sep 2018, accepted on 05 Nov 2018 and first published on 06 Nov 2018


Article type: Paper
DOI: 10.1039/C8CP05595E
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP3) monolayer tuned by electric and optical ways

    S. Zhang, Y. Xie, Y. Hu, X. Niu and Y. Wang, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP05595E

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