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Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD

Abstract

This work presented a detailed study on epitaxial Ta-doped titania (TiO2:Ta) films deposited via the metalorganic chemical vapor deposition method. The effects of Ta dopant concentration on film microstructure and functional characteristics including electrical and optical properties were systematically explored. The results indicated the deposited TiO2:Ta films to possess high crystallization quality, good transparency (>92%) in visible range, as well as tunable electrical properties. The maximum carrier mobility (15.4 cm2 V-1 s-1) and minimum resistivity (8.2×10-2 Ω cm) were achieved at Ta concentrations of 1.0% and 4.0%, respectively. The optical band gaps of the deposited films increased from 3.48 to 3.57eV with the increase of Ta concentration from 0 to 8.0%.

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Publication details

The article was received on 29 Jun 2018, accepted on 03 Aug 2018 and first published on 03 Aug 2018


Article type: Paper
DOI: 10.1039/C8CE01072B
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD

    W. Zhao, L. He, X. Feng, C. Luan and J. Ma, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE01072B

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