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Issue 3, 2016
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Facial synthesis of KCu7S4 nanobelts for nonvolatile memory device applications

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Abstract

Tetragonal KCu7S4 nanobelts (NBs) with width of 200–600 nm and length of up to hundreds of micrometers were facially synthesized via a solution-based method. Electrical analysis reveals that the as-fabricated NB exhibits typical p-type semiconducting characteristics with an exceptionally high carrier mobility of ∼870 cm2 V−1 s−1, which may be attributed to the quasi-1D conduction path along the c axis in the structure of KCu7S4. A further study of a device based on the Cu/KCu7S4 NB/Au Schottky junction shows a stable memory behavior with a set voltage of about 0.6 V, a current ON/OFF ratio of about 104, and a retention time >104 s. Such resistive switching characteristics, according to our analysis are due to the interfacial oxide layers that can efficiently trap the electrons by the oxygen vacancies. This study will offer opportunities for the development of high-performance memory devices with new geometries.

Graphical abstract: Facial synthesis of KCu7S4 nanobelts for nonvolatile memory device applications

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Publication details

The article was received on 17 Nov 2015, accepted on 14 Dec 2015 and first published on 15 Dec 2015


Article type: Paper
DOI: 10.1039/C5TC03829D
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J. Mater. Chem. C, 2016,4, 589-595

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    Facial synthesis of KCu7S4 nanobelts for nonvolatile memory device applications

    C. Wu, X. Wang, Z. Pan, Y. Wang, Y. Yu, L. Wang and L. Luo, J. Mater. Chem. C, 2016, 4, 589
    DOI: 10.1039/C5TC03829D

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